Abnormal I - V characteristics and metal-insulator transition of Fe-doped amorphous carbon∕silicon p - n junction

Simple p - C ∕ n - Si junctions have been fabricated by magnetron sputtering at room temperature and their current-voltage ( I - V ) characteristics have been investigated. The p - n junctions show good rectifying properties in a large voltage scope and interesting I - V characteristics. The most in...

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Bibliographic Details
Published in:Journal of applied physics 2007-03, Vol.101 (5), p.053718-053718-4
Main Authors: Hao, Lanzhong, Xue, Qingzhong, Gao, Xili, Li, Qun, Zheng, Qingbin, Yan, Keyou
Format: Article
Language:English
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Summary:Simple p - C ∕ n - Si junctions have been fabricated by magnetron sputtering at room temperature and their current-voltage ( I - V ) characteristics have been investigated. The p - n junctions show good rectifying properties in a large voltage scope and interesting I - V characteristics. The most interesting phenomenon observed in these p - n junctions is that the temperature dependence of some junction resistance shows a metal-insulator transition whose transition temperature is hugely modulated from 162 to 236 K by a bias voltage increasing from 20 to 40 V . This work shows that amorphous carbon films combined with other semiconductor materials can result in some interesting properties that may have potential applications.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.2710760