Temperature dependence of tunnel resistance for CoFeB∕MgO∕CoFeB magnetoresistive tunneling junctions: The role of magnon

Tunnel resistance for CoFeB∕MgO∕CoFeB junctions with a wide variety of resistance has been investigated as a function of bias voltage Vb and temperature to elucidate bias voltage dependence of the magnetoresistance ratio. Comparison with a conventional NiFe∕AlOx∕CoFe junction is also discussed. In t...

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Bibliographic Details
Published in:Journal of applied physics 2007-05, Vol.101 (9)
Main Authors: Ikegawa, Sumio, Aikawa, Hisanori, Ueda, Tomomasa, Nagamine, Makoto, Shimomura, Naoharu, Yoshikawa, Masatoshi, Hosotani, Keiji, Yoda, Hiroaki
Format: Article
Language:English
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Summary:Tunnel resistance for CoFeB∕MgO∕CoFeB junctions with a wide variety of resistance has been investigated as a function of bias voltage Vb and temperature to elucidate bias voltage dependence of the magnetoresistance ratio. Comparison with a conventional NiFe∕AlOx∕CoFe junction is also discussed. In the case of a parallel alignment of the magnetic moments with a MgO barrier, the Vb dependence was much smaller than that of the antiparallel (AP) alignment with a MgO barrier and of both alignment with an AlOx barrier. This probably originates from the unique tunnel mechanism with a MgO barrier: coherent tunneling of Δ1 electron states. In the case of AP alignment with a MgO barrier, distinctive features were observed: temperature coefficient of tunnel resistance steeply decreased with increasing absolute value of Vb at −0.2V
ISSN:0021-8979
1089-7550
DOI:10.1063/1.2712322