Bipolar resistive switching in polycrystalline TiO2 films

Bipolar resistive switching was found in thin polycrystalline TiO2 films formed by the thermal oxidation of sputtered Ti films. With a Ag top electrode, TiO2 film, and Pt bottom electrode, bistable resistive switching with a low operating voltage and a good uniformity was observed repeatedly without...

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Bibliographic Details
Published in:Applied physics letters 2007-03, Vol.90 (11)
Main Authors: Tsunoda, K., Fukuzumi, Y., Jameson, J. R., Wang, Z., Griffin, P. B., Nishi, Y.
Format: Article
Language:English
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Summary:Bipolar resistive switching was found in thin polycrystalline TiO2 films formed by the thermal oxidation of sputtered Ti films. With a Ag top electrode, TiO2 film, and Pt bottom electrode, bistable resistive switching with a low operating voltage and a good uniformity was observed repeatedly without an initial electrical “forming” process. This switching phenomenon might be described as the formation and rupture of a filamentary conductive path consisting of a chain of Ag atoms. The temperature dependence of the switching voltage is discussed in terms of interstitial ionic diffusion of Ag in the TiO2 matrix.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.2712777