Improved tunnel magnetoresistance characteristics of magnetic tunnel junctions with a Heusler alloy thin film of Co2MnGe and a MgO tunnel barrier

We fabricated magnetic tunnel junctions (MTJs) with a Co-based full-Heusler alloy thin film of Co2MnGe (CMG) and a MgO tunnel barrier. The microfabricated MTJs with a Co-rich CMG film showed relatively high tunnel magnetoresistance ratios of 83% at room temperature and 185% at 4.2K. These values are...

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Bibliographic Details
Published in:Journal of applied physics 2007-05, Vol.101 (9)
Main Authors: Hakamata, Shinya, Ishikawa, Takayuki, Marukame, Takao, Matsuda, Ken-ichi, Uemura, Tetsuya, Arita, Masashi, Yamamoto, Masafumi
Format: Article
Language:English
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Summary:We fabricated magnetic tunnel junctions (MTJs) with a Co-based full-Heusler alloy thin film of Co2MnGe (CMG) and a MgO tunnel barrier. The microfabricated MTJs with a Co-rich CMG film showed relatively high tunnel magnetoresistance ratios of 83% at room temperature and 185% at 4.2K. These values are much higher than those previously obtained for CMG/MgO MTJs with a Co-deficient CMG film.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.2713209