Growth of nonpolar AlN (112¯) and (11¯00) films on SiC substrates by flow-rate modulation epitaxy

Nonpolar AlN (112¯0) and (11¯00) films were grown on SiC substrates by flow-rate modulation epitaxy (FME), wherein trimethylaluminum and NH3 were alternately supplied. FME provides both AlN (112¯0) and (11¯00) films with good crystallinity and smooth surfaces, whereas AlN (11¯00) films obtained by c...

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Bibliographic Details
Published in:Applied physics letters 2007-03, Vol.90 (12)
Main Authors: Akasaka, Tetsuya, Kobayashi, Yasuyuki, Makimoto, Toshiki
Format: Article
Language:English
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Summary:Nonpolar AlN (112¯0) and (11¯00) films were grown on SiC substrates by flow-rate modulation epitaxy (FME), wherein trimethylaluminum and NH3 were alternately supplied. FME provides both AlN (112¯0) and (11¯00) films with good crystallinity and smooth surfaces, whereas AlN (11¯00) films obtained by conventional metal-organic chemical vapor deposition exhibit poor crystallinity and rough surfaces with deep trenches consisting of (0001¯) and (11¯01) N-face microfacets. FME effectively eliminates these trenches, because the microfacets are unstable and have faster growth rates because of the enhanced migration of Al atoms in the absence of excess N surface coverage under the Al-rich condition.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.2716207