Short range scattering effect of InAs quantum dots in the transport properties of two dimensional electron gas

Short range interaction between two dimensional electron gas (2DEG) and InAs quantum dots embedded in the Ga As ∕ Al Ga As quantum well is investigated as a function of carrier density. At low carrier density the interaction is significantly characterized by a transport to quantum lifetime ratio of...

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Bibliographic Details
Published in:Applied physics letters 2007-04, Vol.90 (15), p.152110-152110-3
Main Authors: Kannan, E. S., Kim, Gil-Ho, Kumar, Sanjeev, Farrer, I., Ritchie, D. A., Son, Jun Ho, Baik, Jeong Min, Lee, Jong-Lam, Youn, D. H., Kang, Kwang-Yong
Format: Article
Language:English
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Summary:Short range interaction between two dimensional electron gas (2DEG) and InAs quantum dots embedded in the Ga As ∕ Al Ga As quantum well is investigated as a function of carrier density. At low carrier density the interaction is significantly characterized by a transport to quantum lifetime ratio of less than 5. However, with an increase in carrier density, quantum lifetime is observed to undergo a sharp transition from 0.17 to 0.25 ps . This is attributed to the screening of short range repulsive scattering due to InAs quantum dots by the 2DEG.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.2720704