Submicron mapping of strained silicon-on-insulator features induced

Real-space maps of strain within silicon-on-insulator (SOI) features induced by adjacent, embedded shallow-trench-isolation (STI) Si O 2 regions were obtained using x-ray microbeam diffraction. The quantitative strain mapping indicated that the SOI strain was largest at the SOI/STI interface and dec...

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Bibliographic Details
Published in:Applied physics letters 2007-04, Vol.90 (17), p.171919-171919-3
Main Authors: Murray, Conal E., Sankarapandian, M., Polvino, S. M., Noyan, I. C., Lai, B., Cai, Z.
Format: Article
Language:English
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Summary:Real-space maps of strain within silicon-on-insulator (SOI) features induced by adjacent, embedded shallow-trench-isolation (STI) Si O 2 regions were obtained using x-ray microbeam diffraction. The quantitative strain mapping indicated that the SOI strain was largest at the SOI/STI interface and decreased as a function of distance from this interface. An out-of-plane residual strain of approximately − 31 μ ε was observed in the blanket regions of the SOI. A comparison of the depth-averaged strain distributions to the strain profiles calculated from an Eshelby inclusion model indicated an equivalent eigenstrain of − 0.55 % in the STI regions acting on the SOI features.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.2732180