Al doping in ( 1 − 101 ) GaN films grown on patterned (001)Si substrate

The effect of Al doping on crystalline and optical properties of semipolar ( 1 − 101 ) GaN was investigated. The samples were grown on a patterned (001)Si substrate by selective metal-organic vapor phase epitaxy. The x-ray analyses showed that the strain in the ( 1 − 101 ) GaN layer is reduced subst...

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Bibliographic Details
Published in:Journal of applied physics 2007-05, Vol.101 (10), p.103513-103513-5
Main Authors: Hikosaka, T., Honda, Y., Yamaguchi, M., Sawaki, N.
Format: Article
Language:English
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Summary:The effect of Al doping on crystalline and optical properties of semipolar ( 1 − 101 ) GaN was investigated. The samples were grown on a patterned (001)Si substrate by selective metal-organic vapor phase epitaxy. The x-ray analyses showed that the strain in the ( 1 − 101 ) GaN layer is reduced substantially by the Al doping. Moreover, the cathode-luminescence (CL) intensity of the band edge emission band was enhanced and the linewidth became narrow. The CL images showed the reduction of dislocation density. These results show that the small amount of Al atoms in GaN improves the crystalline and optical properties. The results are attributed to the dislocation pinning and solution hardening effect due to Al atoms.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.2734098