Work function variation of nickel silicide using an ytterbium buffer layer for Schottky barrier metal-oxide-semiconductor field-effect transistors

In this article, incorporating ytterbium into Ni-silicide using an Yb interlayer is proposed to reduce the work function of Ni-silicide for a Ni-silicided Schottky barrier diode. The proposed Ni-silicide exhibited good Schottky barrier diode characteristics owing to the reduced work function of abou...

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Bibliographic Details
Published in:Journal of applied physics 2007-05, Vol.101 (10)
Main Authors: Lee, Won-Jae, Kim, Do-Woo, Oh, Soon-Young, Kim, Yong-Jin, Zhang, Ying-Ying, Zhong, Zhun, Li, Shi-Guang, Jung, Soon-Yen, Han, In-Sik, Gu, Tae-kyu, Bae, Tae-Sung, Lee, Ga-Won, Wang, Jin-Suk, Lee, Hi-Deok
Format: Article
Language:English
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Summary:In this article, incorporating ytterbium into Ni-silicide using an Yb interlayer is proposed to reduce the work function of Ni-silicide for a Ni-silicided Schottky barrier diode. The proposed Ni-silicide exhibited good Schottky barrier diode characteristics owing to the reduced work function of about 0.15−0.38 eV. Even though the ytterbium layer was deposited below nickel, a ternary phase (YbxNi1−x)Si is formed at the top region of the Ni-silicide, which is believed to reduce the work function.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.2734882