Photonic crystal effect on light emission from InGaN∕GaN multi-quantum-well structures

Triangular hole arrays with nanoscaled lattice constants of 230 and 460nm were fabricated on a p-type GaN epitaxial layer grown on an InGaN∕GaN multi-quantum-well light emitting diode structure by metal-organic chemical vapor deposition. The hole geometries of dry-etched thin slabs for triangular la...

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Bibliographic Details
Published in:Applied physics letters 2007-04, Vol.90 (18)
Main Authors: Kim, Keunjoo, Choi, Jaeho, Jeon, Sang Cheol, Kim, Jin Soo, Lee, Hee Mok
Format: Article
Language:English
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Summary:Triangular hole arrays with nanoscaled lattice constants of 230 and 460nm were fabricated on a p-type GaN epitaxial layer grown on an InGaN∕GaN multi-quantum-well light emitting diode structure by metal-organic chemical vapor deposition. The hole geometries of dry-etched thin slabs for triangular lattice constants of 230 and 460nm possessed diameters of 223 and 218nm at the surface, and 108 and 76nm at the bottom, with depths of 31 and 27nm, respectively. The hole array with a lattice constant of 230nm enhances photoluminescence intensity at wavelengths of 364 and 406nm, but reduces light extraction at a wavelength of 450nm, which indicates destructive surface diffraction correlated with light scattering in the photonic crystal structure.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.2735927