Magnetization dependence on carrier doping in epitaxial ZnO thin films co-doped with Mn and P

The magnetic and transport properties of Mn-doped ZnO thin films co-doped with P are examined. Superconducting quantum interference device magnetometry measurements indicate that the films are ferromagnetic with an inverse correlation between magnetization and electron density as controlled by P dop...

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Published in:Journal of applied physics 2007-06, Vol.101 (12), p.123909-123909-5
Main Authors: Ivill, M., Pearton, S. J., Heo, Y. W., Kelly, J., Hebard, A. F., Norton, D. P.
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description The magnetic and transport properties of Mn-doped ZnO thin films co-doped with P are examined. Superconducting quantum interference device magnetometry measurements indicate that the films are ferromagnetic with an inverse correlation between magnetization and electron density as controlled by P doping. In particular, under conditions where the acceptor dopants are activated leading to a decrease in free-electron density, magnetization is enhanced. The result is consistent with hole-mediated ferromagnetism in Mn-doped ZnO, in which bound acceptors mediate the ferromagnetic ordering. Increasing the electron density decreases the acceptor concentration, thus quenching the ferromagnetic exchange. This result is important in understanding ferromagnetism in transition metal doped semiconductors for spintronic devices.
doi_str_mv 10.1063/1.2739302
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title Magnetization dependence on carrier doping in epitaxial ZnO thin films co-doped with Mn and P
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