Structural studies of single crystalline In2O3 films epitaxially grown on InN(0001)

Single crystalline In2O3 is a prospective material to be used as a gate dielectric in InN based field effect transistors (FETs). This work addresses structural investigations of In2O3∕InN heterostuctures for metal-oxide-semiconductor FET devices. Single crystalline cubic In2O3 (111) films were epita...

Full description

Saved in:
Bibliographic Details
Published in:Applied physics letters 2007-05, Vol.90 (22)
Main Authors: Wang, Ch. Y., Lebedev, V., Cimalla, V., Kups, Th, Tonisch, K., Ambacher, O.
Format: Article
Language:English
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:Single crystalline In2O3 is a prospective material to be used as a gate dielectric in InN based field effect transistors (FETs). This work addresses structural investigations of In2O3∕InN heterostuctures for metal-oxide-semiconductor FET devices. Single crystalline cubic In2O3 (111) films were epitaxially grown on hexagonal InN (0001) epilayers. The epitaxial relationship between the film and the template was determined as In2O3[111]‖InN[0001] and In2O3[101¯]‖InN⟨112¯0⟩ with an effective lattice mismatch of 2.14%. On the basis of the structural investigations, a phenomenological model for the growth of In2O3 on InN (0001) is proposed.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.2743907