Structural studies of single crystalline In2O3 films epitaxially grown on InN(0001)

Single crystalline In2O3 is a prospective material to be used as a gate dielectric in InN based field effect transistors (FETs). This work addresses structural investigations of In2O3∕InN heterostuctures for metal-oxide-semiconductor FET devices. Single crystalline cubic In2O3 (111) films were epita...

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Published in:Applied physics letters 2007-05, Vol.90 (22)
Main Authors: Wang, Ch. Y., Lebedev, V., Cimalla, V., Kups, Th, Tonisch, K., Ambacher, O.
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Language:English
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cited_by cdi_FETCH-LOGICAL-c225t-115efeefca802e87b3795471502baadeb966a372b27d277be04e8018c53ad7bb3
cites cdi_FETCH-LOGICAL-c225t-115efeefca802e87b3795471502baadeb966a372b27d277be04e8018c53ad7bb3
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container_issue 22
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container_title Applied physics letters
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creator Wang, Ch. Y.
Lebedev, V.
Cimalla, V.
Kups, Th
Tonisch, K.
Ambacher, O.
description Single crystalline In2O3 is a prospective material to be used as a gate dielectric in InN based field effect transistors (FETs). This work addresses structural investigations of In2O3∕InN heterostuctures for metal-oxide-semiconductor FET devices. Single crystalline cubic In2O3 (111) films were epitaxially grown on hexagonal InN (0001) epilayers. The epitaxial relationship between the film and the template was determined as In2O3[111]‖InN[0001] and In2O3[101¯]‖InN⟨112¯0⟩ with an effective lattice mismatch of 2.14%. On the basis of the structural investigations, a phenomenological model for the growth of In2O3 on InN (0001) is proposed.
doi_str_mv 10.1063/1.2743907
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title Structural studies of single crystalline In2O3 films epitaxially grown on InN(0001)
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