Combinatorial approach to thin-film transistors using multicomponent semiconductor channels: An application to amorphous oxide semiconductors in In-Ga-Zn-O system

A combinatorial approach was applied to thin-film transistors (TFTs) using amorphous In-Ga-Zn-O semiconductor channels. A large number of TFTs, having n -type channels with different chemical compositions, were fabricated simultaneously on a substrate. A systematic relation was clarified among the c...

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Bibliographic Details
Published in:Applied physics letters 2007-06, Vol.90 (24), p.242114-242114-3
Main Authors: Iwasaki, Tatsuya, Itagaki, Naho, Den, Tohru, Kumomi, Hideya, Nomura, Kenji, Kamiya, Toshio, Hosono, Hideo
Format: Article
Language:English
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Summary:A combinatorial approach was applied to thin-film transistors (TFTs) using amorphous In-Ga-Zn-O semiconductor channels. A large number of TFTs, having n -type channels with different chemical compositions, were fabricated simultaneously on a substrate. A systematic relation was clarified among the compositional ratio of In:Ga:Zn, oxygen partial pressure in film deposition atmosphere, and TFT characteristics. The results provide an experimental basis to understand the roles of each metallic element in the In-Ga-Zn-O system. This information leads to a guideline to tune the metallic compositions for required TFT specifications.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.2749177