Transition voltage of asymmetric H state to bend in pi cell

The dynamic behavior for the splay to bend transition of pi cell is investigated numerically in detail. When a pi cell has asymmetric pretilt angles, the initial splay configuration changes to asymmetric H state driven by a low voltage, then to bend configuration driven by a pulse voltage that is la...

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Bibliographic Details
Published in:Applied physics letters 2007-07, Vol.91 (1), p.011103-011103-3
Main Authors: Sun, Yubao, Jiang, Li, Li, Zaidong, Ma, Hongmei, Zhang, Zhidong
Format: Article
Language:English
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Summary:The dynamic behavior for the splay to bend transition of pi cell is investigated numerically in detail. When a pi cell has asymmetric pretilt angles, the initial splay configuration changes to asymmetric H state driven by a low voltage, then to bend configuration driven by a pulse voltage that is larger than a transition voltage. The author's results show that the transition voltage decreases with the increasing pretilt angle, and increases with the increasing anchoring energy and surface viscosity. The transition time is less than 50 ms which is much faster than that of other methods.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.2753492