Study of InAs quantum dots in AlGaAs∕GaAs heterostructure by ballistic electron emission microscopy/spectroscopy

Self-assembled InAs quantum dots in GaAs∕GaAlAs structures were examined by ballistic electron emission microscopy/spectroscopy. The studied structures were grown by metal-organic chemical vapor deposition. Quantum dots with an image of elliptical shape were studied. Ballistic current-voltage charac...

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Bibliographic Details
Published in:Applied physics letters 2007-07, Vol.91 (4)
Main Authors: Walachová, J., Zelinka, J., Malina, V., Vaniš, J., Šroubek, F., Pangrác, J., Melichar, K., Hulicius, E.
Format: Article
Language:English
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Summary:Self-assembled InAs quantum dots in GaAs∕GaAlAs structures were examined by ballistic electron emission microscopy/spectroscopy. The studied structures were grown by metal-organic chemical vapor deposition. Quantum dots with an image of elliptical shape were studied. Ballistic current-voltage characteristics through the quantum dot and outside the quantum dot are compared in the voltage range of 0.55–2V. In the voltage range from 0.55to0.8V examples of ballistic characteristics and their derivatives are given. In a detailed study, measurements with 1mV step in the energy range from 0.55to0.63V are presented.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.2760134