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Physical and electrical characteristics of atomic layer deposited TiN nanocrystal memory capacitors
The physical and electrical characteristics of atomic layer deposited TiN nanocrystals embedded in high- k Al 2 O 3 films in a metal/ Al 2 O 3 ∕ [ Ti N ∕ Al 2 O 3 ] ∕ Si O 2 ∕ p - Si structure have been investigated. High-resolution transmission electron microscopy and x-ray photoelectron spectrosco...
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| Published in: | Applied physics letters 2007-07, Vol.91 (4), p.043114-043114-3 |
|---|---|
| Main Authors: | , , , , , , |
| Format: | Article |
| Language: | English |
| Citations: | Items that this one cites Items that cite this one |
| Online Access: | Get full text |
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| Summary: | The physical and electrical characteristics of atomic layer deposited TiN nanocrystals embedded in high-
k
Al
2
O
3
films in a metal/
Al
2
O
3
∕
[
Ti
N
∕
Al
2
O
3
]
∕
Si
O
2
∕
p
-
Si
structure have been investigated. High-resolution transmission electron microscopy and x-ray photoelectron spectroscopy show the formation of tiny TiN nanocrystals embedded in
Al
2
O
3
films after subsequent annealing treatment. The TiN nanocrystals with a high density of
>
1
×
10
12
∕
cm
2
and a small size of
<
3
nm
have been observed. A large hysteresis memory window of
∼
4.3
V
at small sweeping gate voltage of
3
V
has been observed as compared with a pure
Al
2
O
3
charge trapping layer, due to highly charge confinement in the TiN metal nanocrystals. The hysteresis memory window of
1.4
V
has also been observed under an extremely small sweeping gate voltage of
1
V
. A large memory window of
∼
3.9
V
is observed after
10
years
of retention. A maximum hysteresis memory window is limited by both of the nanocrystal density and leakage current at a high temperature annealing treatment of the TiN nanocrystal memory capacitors. |
|---|---|
| ISSN: | 0003-6951 1077-3118 |
| DOI: | 10.1063/1.2766680 |