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Physical and electrical characteristics of atomic layer deposited TiN nanocrystal memory capacitors
The physical and electrical characteristics of atomic layer deposited TiN nanocrystals embedded in high- k Al 2 O 3 films in a metal/ Al 2 O 3 ∕ [ Ti N ∕ Al 2 O 3 ] ∕ Si O 2 ∕ p - Si structure have been investigated. High-resolution transmission electron microscopy and x-ray photoelectron spectrosco...
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| Published in: | Applied physics letters 2007-07, Vol.91 (4), p.043114-043114-3 |
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| Main Authors: | , , , , , , |
| Format: | Article |
| Language: | English |
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| cited_by | cdi_FETCH-LOGICAL-c385t-e362888b6377c6f357c42c373f422ad1963de5a3e28167ed7dca6316c41106033 |
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| cites | cdi_FETCH-LOGICAL-c385t-e362888b6377c6f357c42c373f422ad1963de5a3e28167ed7dca6316c41106033 |
| container_end_page | 043114-3 |
| container_issue | 4 |
| container_start_page | 043114 |
| container_title | Applied physics letters |
| container_volume | 91 |
| creator | Maikap, S. Tzeng, P. J. Lee, H. Y. Wang, C. C. Tien, T. C. Lee, L. S. Tsai, M.-J. |
| description | The physical and electrical characteristics of atomic layer deposited TiN nanocrystals embedded in high-
k
Al
2
O
3
films in a metal/
Al
2
O
3
∕
[
Ti
N
∕
Al
2
O
3
]
∕
Si
O
2
∕
p
-
Si
structure have been investigated. High-resolution transmission electron microscopy and x-ray photoelectron spectroscopy show the formation of tiny TiN nanocrystals embedded in
Al
2
O
3
films after subsequent annealing treatment. The TiN nanocrystals with a high density of
>
1
×
10
12
∕
cm
2
and a small size of
<
3
nm
have been observed. A large hysteresis memory window of
∼
4.3
V
at small sweeping gate voltage of
3
V
has been observed as compared with a pure
Al
2
O
3
charge trapping layer, due to highly charge confinement in the TiN metal nanocrystals. The hysteresis memory window of
1.4
V
has also been observed under an extremely small sweeping gate voltage of
1
V
. A large memory window of
∼
3.9
V
is observed after
10
years
of retention. A maximum hysteresis memory window is limited by both of the nanocrystal density and leakage current at a high temperature annealing treatment of the TiN nanocrystal memory capacitors. |
| doi_str_mv | 10.1063/1.2766680 |
| format | article |
| fullrecord | <record><control><sourceid>scitation_cross</sourceid><recordid>TN_cdi_crossref_primary_10_1063_1_2766680</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>apl</sourcerecordid><originalsourceid>FETCH-LOGICAL-c385t-e362888b6377c6f357c42c373f422ad1963de5a3e28167ed7dca6316c41106033</originalsourceid><addsrcrecordid>eNp1kE1LAzEQhoMoWKsH_0GuHrYmO90kvQhS_IKiHuo5jJMsjexuSpLL_ntXW4-ehheed5h5GLuWYiGFglu5qLVSyogTNpNC6wqkNKdsJoSASq0aec4ucv6aYlMDzBi978YcCDuOg-O-81TSb6QdJqTiU8glUOax5VhiH4h3OPrEnd_HHIp3fBte-YBDpDTmMjV738c0csI9Uigx5Ut21mKX_dVxztnH48N2_Vxt3p5e1vebisA0pfKgamPMpwKtSbXQaFrWBBraZV2jkysFzjcIvjZSae-0I1QgFS3l9LoAmLObw15KMefkW7tPocc0Winsjx0r7dHOxN4d2DzdiCXE4X_4T5GdFNmjIvgGdqptig</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Physical and electrical characteristics of atomic layer deposited TiN nanocrystal memory capacitors</title><source>American Institute of Physics:Jisc Collections:Transitional Journals Agreement 2021-23 (Reading list)</source><source>AIP_美国物理联合会现刊（与NSTL共建）</source><creator>Maikap, S. ; Tzeng, P. J. ; Lee, H. Y. ; Wang, C. C. ; Tien, T. C. ; Lee, L. S. ; Tsai, M.-J.</creator><creatorcontrib>Maikap, S. ; Tzeng, P. J. ; Lee, H. Y. ; Wang, C. C. ; Tien, T. C. ; Lee, L. S. ; Tsai, M.-J.</creatorcontrib><description>The physical and electrical characteristics of atomic layer deposited TiN nanocrystals embedded in high-
k
Al
2
O
3
films in a metal/
Al
2
O
3
∕
[
Ti
N
∕
Al
2
O
3
]
∕
Si
O
2
∕
p
-
Si
structure have been investigated. High-resolution transmission electron microscopy and x-ray photoelectron spectroscopy show the formation of tiny TiN nanocrystals embedded in
Al
2
O
3
films after subsequent annealing treatment. The TiN nanocrystals with a high density of
>
1
×
10
12
∕
cm
2
and a small size of
<
3
nm
have been observed. A large hysteresis memory window of
∼
4.3
V
at small sweeping gate voltage of
3
V
has been observed as compared with a pure
Al
2
O
3
charge trapping layer, due to highly charge confinement in the TiN metal nanocrystals. The hysteresis memory window of
1.4
V
has also been observed under an extremely small sweeping gate voltage of
1
V
. A large memory window of
∼
3.9
V
is observed after
10
years
of retention. A maximum hysteresis memory window is limited by both of the nanocrystal density and leakage current at a high temperature annealing treatment of the TiN nanocrystal memory capacitors.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/1.2766680</identifier><identifier>CODEN: APPLAB</identifier><language>eng</language><publisher>American Institute of Physics</publisher><ispartof>Applied physics letters, 2007-07, Vol.91 (4), p.043114-043114-3</ispartof><rights>2007 American Institute of Physics</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c385t-e362888b6377c6f357c42c373f422ad1963de5a3e28167ed7dca6316c41106033</citedby><cites>FETCH-LOGICAL-c385t-e362888b6377c6f357c42c373f422ad1963de5a3e28167ed7dca6316c41106033</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://pubs.aip.org/apl/article-lookup/doi/10.1063/1.2766680$$EHTML$$P50$$Gscitation$$H</linktohtml><link.rule.ids>314,780,782,784,795,27924,27925,76383</link.rule.ids></links><search><creatorcontrib>Maikap, S.</creatorcontrib><creatorcontrib>Tzeng, P. J.</creatorcontrib><creatorcontrib>Lee, H. Y.</creatorcontrib><creatorcontrib>Wang, C. C.</creatorcontrib><creatorcontrib>Tien, T. C.</creatorcontrib><creatorcontrib>Lee, L. S.</creatorcontrib><creatorcontrib>Tsai, M.-J.</creatorcontrib><title>Physical and electrical characteristics of atomic layer deposited TiN nanocrystal memory capacitors</title><title>Applied physics letters</title><description>The physical and electrical characteristics of atomic layer deposited TiN nanocrystals embedded in high-
k
Al
2
O
3
films in a metal/
Al
2
O
3
∕
[
Ti
N
∕
Al
2
O
3
]
∕
Si
O
2
∕
p
-
Si
structure have been investigated. High-resolution transmission electron microscopy and x-ray photoelectron spectroscopy show the formation of tiny TiN nanocrystals embedded in
Al
2
O
3
films after subsequent annealing treatment. The TiN nanocrystals with a high density of
>
1
×
10
12
∕
cm
2
and a small size of
<
3
nm
have been observed. A large hysteresis memory window of
∼
4.3
V
at small sweeping gate voltage of
3
V
has been observed as compared with a pure
Al
2
O
3
charge trapping layer, due to highly charge confinement in the TiN metal nanocrystals. The hysteresis memory window of
1.4
V
has also been observed under an extremely small sweeping gate voltage of
1
V
. A large memory window of
∼
3.9
V
is observed after
10
years
of retention. A maximum hysteresis memory window is limited by both of the nanocrystal density and leakage current at a high temperature annealing treatment of the TiN nanocrystal memory capacitors.</description><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2007</creationdate><recordtype>article</recordtype><recordid>eNp1kE1LAzEQhoMoWKsH_0GuHrYmO90kvQhS_IKiHuo5jJMsjexuSpLL_ntXW4-ehheed5h5GLuWYiGFglu5qLVSyogTNpNC6wqkNKdsJoSASq0aec4ucv6aYlMDzBi978YcCDuOg-O-81TSb6QdJqTiU8glUOax5VhiH4h3OPrEnd_HHIp3fBte-YBDpDTmMjV738c0csI9Uigx5Ut21mKX_dVxztnH48N2_Vxt3p5e1vebisA0pfKgamPMpwKtSbXQaFrWBBraZV2jkysFzjcIvjZSae-0I1QgFS3l9LoAmLObw15KMefkW7tPocc0Winsjx0r7dHOxN4d2DzdiCXE4X_4T5GdFNmjIvgGdqptig</recordid><startdate>20070723</startdate><enddate>20070723</enddate><creator>Maikap, S.</creator><creator>Tzeng, P. J.</creator><creator>Lee, H. Y.</creator><creator>Wang, C. C.</creator><creator>Tien, T. C.</creator><creator>Lee, L. S.</creator><creator>Tsai, M.-J.</creator><general>American Institute of Physics</general><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>20070723</creationdate><title>Physical and electrical characteristics of atomic layer deposited TiN nanocrystal memory capacitors</title><author>Maikap, S. ; Tzeng, P. J. ; Lee, H. Y. ; Wang, C. C. ; Tien, T. C. ; Lee, L. S. ; Tsai, M.-J.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c385t-e362888b6377c6f357c42c373f422ad1963de5a3e28167ed7dca6316c41106033</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2007</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Maikap, S.</creatorcontrib><creatorcontrib>Tzeng, P. J.</creatorcontrib><creatorcontrib>Lee, H. Y.</creatorcontrib><creatorcontrib>Wang, C. C.</creatorcontrib><creatorcontrib>Tien, T. C.</creatorcontrib><creatorcontrib>Lee, L. S.</creatorcontrib><creatorcontrib>Tsai, M.-J.</creatorcontrib><collection>CrossRef</collection><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Maikap, S.</au><au>Tzeng, P. J.</au><au>Lee, H. Y.</au><au>Wang, C. C.</au><au>Tien, T. C.</au><au>Lee, L. S.</au><au>Tsai, M.-J.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Physical and electrical characteristics of atomic layer deposited TiN nanocrystal memory capacitors</atitle><jtitle>Applied physics letters</jtitle><date>2007-07-23</date><risdate>2007</risdate><volume>91</volume><issue>4</issue><spage>043114</spage><epage>043114-3</epage><pages>043114-043114-3</pages><issn>0003-6951</issn><eissn>1077-3118</eissn><coden>APPLAB</coden><abstract>The physical and electrical characteristics of atomic layer deposited TiN nanocrystals embedded in high-
k
Al
2
O
3
films in a metal/
Al
2
O
3
∕
[
Ti
N
∕
Al
2
O
3
]
∕
Si
O
2
∕
p
-
Si
structure have been investigated. High-resolution transmission electron microscopy and x-ray photoelectron spectroscopy show the formation of tiny TiN nanocrystals embedded in
Al
2
O
3
films after subsequent annealing treatment. The TiN nanocrystals with a high density of
>
1
×
10
12
∕
cm
2
and a small size of
<
3
nm
have been observed. A large hysteresis memory window of
∼
4.3
V
at small sweeping gate voltage of
3
V
has been observed as compared with a pure
Al
2
O
3
charge trapping layer, due to highly charge confinement in the TiN metal nanocrystals. The hysteresis memory window of
1.4
V
has also been observed under an extremely small sweeping gate voltage of
1
V
. A large memory window of
∼
3.9
V
is observed after
10
years
of retention. A maximum hysteresis memory window is limited by both of the nanocrystal density and leakage current at a high temperature annealing treatment of the TiN nanocrystal memory capacitors.</abstract><pub>American Institute of Physics</pub><doi>10.1063/1.2766680</doi><oa>free_for_read</oa></addata></record> |
| fulltext | fulltext |
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| ispartof | Applied physics letters, 2007-07, Vol.91 (4), p.043114-043114-3 |
| issn | 0003-6951 1077-3118 |
| language | eng |
| recordid | cdi_crossref_primary_10_1063_1_2766680 |
| source | American Institute of Physics:Jisc Collections:Transitional Journals Agreement 2021-23 (Reading list); AIP_美国物理联合会现刊（与NSTL共建） |
| title | Physical and electrical characteristics of atomic layer deposited TiN nanocrystal memory capacitors |
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