Local modification of electronic structure of Si ( 111 ) - 7 × 7 surfaces by forming molybdenum-encapsulating Si clusters

Using scanning tunneling microscopy, the authors show that uniform-size Mo-encapsulating Si clusters, Mo Si n , were synthesized on Si ( 111 ) - 7 × 7 surfaces by the reaction between Si H 4 and Mo atoms deposited on the surface followed by thermal annealing at 600 ° C . Comparing observed images wi...

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Bibliographic Details
Published in:Applied physics letters 2007-08, Vol.91 (6), p.063109-063109-3
Main Authors: Uchida, Noriyuki, Yahata, Hiroshi, Kanayama, Toshihiko, Bolotov, Leonid
Format: Article
Language:English
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Summary:Using scanning tunneling microscopy, the authors show that uniform-size Mo-encapsulating Si clusters, Mo Si n , were synthesized on Si ( 111 ) - 7 × 7 surfaces by the reaction between Si H 4 and Mo atoms deposited on the surface followed by thermal annealing at 600 ° C . Comparing observed images with ab initio structure calculations indicates that n = 6 . According to scanning tunneling spectroscopy measurements, the Mo Si n cluster has a semiconducting energy gap of approximately 0.3 eV , indicating that the metallic electronic state of the 7 × 7 surface can be locally modified by formation of the Mo Si n cluster.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.2767205