Adsorption-controlled molecular-beam epitaxial growth of BiFeO3

Bi Fe O 3 thin films have been deposited on (111) SrTiO3 single crystal substrates by reactive molecular-beam epitaxy in an adsorption-controlled growth regime. This is achieved by supplying a bismuth overpressure and utilizing the differential vapor pressures between bismuth oxides and BiFeO3 to co...

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Bibliographic Details
Published in:Applied physics letters 2007-08, Vol.91 (7)
Main Authors: Ihlefeld, J. F., Kumar, A., Gopalan, V., Schlom, D. G., Chen, Y. B., Pan, X. Q., Heeg, T., Schubert, J., Ke, X., Schiffer, P., Orenstein, J., Martin, L. W., Chu, Y. H., Ramesh, R.
Format: Article
Language:English
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Summary:Bi Fe O 3 thin films have been deposited on (111) SrTiO3 single crystal substrates by reactive molecular-beam epitaxy in an adsorption-controlled growth regime. This is achieved by supplying a bismuth overpressure and utilizing the differential vapor pressures between bismuth oxides and BiFeO3 to control stoichiometry. Four-circle x-ray diffraction reveals phase-pure, untwinned, epitaxial, (0001)-oriented films with rocking curve full width at half maximum values as narrow as 25arcsec (0.007°). Second harmonic generation polar plots combined with diffraction establish the crystallographic point group of these untwinned epitaxial films to be 3m at room temperature.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.2767771