Increment of dielectric properties of SrTiO3 thin films by SrO interlayer on Ru bottom electrodes

Sr Ti O 3 thin films were deposited on Ru using plasma-enhanced atomic layer deposition with and without a SrO interlayer. When the SrTiO3 films were deposited on Ru directly, the dielectric constants of the films decreased abruptly from 65 to 16 as the thickness fell below 20nm. This change was rel...

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Bibliographic Details
Published in:Applied physics letters 2007-08, Vol.91 (6)
Main Authors: Ahn, Ji-Hoon, Kim, Ja-Yong, Kang, Sang-Won, Kim, Jin-Hyock, Roh, Jae-Sung
Format: Article
Language:English
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Summary:Sr Ti O 3 thin films were deposited on Ru using plasma-enhanced atomic layer deposition with and without a SrO interlayer. When the SrTiO3 films were deposited on Ru directly, the dielectric constants of the films decreased abruptly from 65 to 16 as the thickness fell below 20nm. This change was related to film crystallinity. Conversely, when a seed layer was prepared by depositing 2.7nm SrO and postannealing before SrTiO3 deposition, the crystallinity of the SrTiO3 films was enhanced and the thickness dependency of the dielectric constant was reduced. As a result, the dielectric constant of 10nm SrTiO3 films was improved from 16 to 50.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.2768887