Loading…
Increment of dielectric properties of SrTiO3 thin films by SrO interlayer on Ru bottom electrodes
Sr Ti O 3 thin films were deposited on Ru using plasma-enhanced atomic layer deposition with and without a SrO interlayer. When the SrTiO3 films were deposited on Ru directly, the dielectric constants of the films decreased abruptly from 65 to 16 as the thickness fell below 20nm. This change was rel...
Saved in:
Published in: | Applied physics letters 2007-08, Vol.91 (6) |
---|---|
Main Authors: | , , , , |
Format: | Article |
Language: | English |
Citations: | Items that this one cites Items that cite this one |
Online Access: | Get full text |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
cited_by | cdi_FETCH-LOGICAL-c159t-e7c689156c9c99600f037c702924869f3d111c8d002396c9ae109ff4a237f4553 |
---|---|
cites | cdi_FETCH-LOGICAL-c159t-e7c689156c9c99600f037c702924869f3d111c8d002396c9ae109ff4a237f4553 |
container_end_page | |
container_issue | 6 |
container_start_page | |
container_title | Applied physics letters |
container_volume | 91 |
creator | Ahn, Ji-Hoon Kim, Ja-Yong Kang, Sang-Won Kim, Jin-Hyock Roh, Jae-Sung |
description | Sr Ti O 3 thin films were deposited on Ru using plasma-enhanced atomic layer deposition with and without a SrO interlayer. When the SrTiO3 films were deposited on Ru directly, the dielectric constants of the films decreased abruptly from 65 to 16 as the thickness fell below 20nm. This change was related to film crystallinity. Conversely, when a seed layer was prepared by depositing 2.7nm SrO and postannealing before SrTiO3 deposition, the crystallinity of the SrTiO3 films was enhanced and the thickness dependency of the dielectric constant was reduced. As a result, the dielectric constant of 10nm SrTiO3 films was improved from 16 to 50. |
doi_str_mv | 10.1063/1.2768887 |
format | article |
fullrecord | <record><control><sourceid>crossref</sourceid><recordid>TN_cdi_crossref_primary_10_1063_1_2768887</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>10_1063_1_2768887</sourcerecordid><originalsourceid>FETCH-LOGICAL-c159t-e7c689156c9c99600f037c702924869f3d111c8d002396c9ae109ff4a237f4553</originalsourceid><addsrcrecordid>eNotkDtPwzAUhS0EEqUw8A-8MqTcGzd-jKjiUalSJChzlDrXwiiJI9sM_fekaqej89A3HMYeEVYIUjzjqlRSa62u2AJBqUIg6mu2AABRSFPhLbtL6Xe2VSnEgrXb0UYaaMw8ON556snm6C2fYpgoZk_pVHzFva8Fzz9-5M73Q-KH4xzW3I-ZYt8eKfIw8s8_fgg5h4GfOaGjdM9uXNsnerjokn2_ve43H8Wuft9uXnaFxcrkgpSV2mAlrbHGSAAHQlkFpSnXWhonOkS0ugMohZlHLSEY59ZtKZRbV5VYsqcz18aQUiTXTNEPbTw2CM3pmwabyzfiH7QkVbQ</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Increment of dielectric properties of SrTiO3 thin films by SrO interlayer on Ru bottom electrodes</title><source>American Institute of Physics:Jisc Collections:Transitional Journals Agreement 2021-23 (Reading list)</source><source>AIP_美国物理联合会现刊(与NSTL共建)</source><creator>Ahn, Ji-Hoon ; Kim, Ja-Yong ; Kang, Sang-Won ; Kim, Jin-Hyock ; Roh, Jae-Sung</creator><creatorcontrib>Ahn, Ji-Hoon ; Kim, Ja-Yong ; Kang, Sang-Won ; Kim, Jin-Hyock ; Roh, Jae-Sung</creatorcontrib><description>Sr Ti O 3 thin films were deposited on Ru using plasma-enhanced atomic layer deposition with and without a SrO interlayer. When the SrTiO3 films were deposited on Ru directly, the dielectric constants of the films decreased abruptly from 65 to 16 as the thickness fell below 20nm. This change was related to film crystallinity. Conversely, when a seed layer was prepared by depositing 2.7nm SrO and postannealing before SrTiO3 deposition, the crystallinity of the SrTiO3 films was enhanced and the thickness dependency of the dielectric constant was reduced. As a result, the dielectric constant of 10nm SrTiO3 films was improved from 16 to 50.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/1.2768887</identifier><language>eng</language><ispartof>Applied physics letters, 2007-08, Vol.91 (6)</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c159t-e7c689156c9c99600f037c702924869f3d111c8d002396c9ae109ff4a237f4553</citedby><cites>FETCH-LOGICAL-c159t-e7c689156c9c99600f037c702924869f3d111c8d002396c9ae109ff4a237f4553</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,782,784,27924,27925</link.rule.ids></links><search><creatorcontrib>Ahn, Ji-Hoon</creatorcontrib><creatorcontrib>Kim, Ja-Yong</creatorcontrib><creatorcontrib>Kang, Sang-Won</creatorcontrib><creatorcontrib>Kim, Jin-Hyock</creatorcontrib><creatorcontrib>Roh, Jae-Sung</creatorcontrib><title>Increment of dielectric properties of SrTiO3 thin films by SrO interlayer on Ru bottom electrodes</title><title>Applied physics letters</title><description>Sr Ti O 3 thin films were deposited on Ru using plasma-enhanced atomic layer deposition with and without a SrO interlayer. When the SrTiO3 films were deposited on Ru directly, the dielectric constants of the films decreased abruptly from 65 to 16 as the thickness fell below 20nm. This change was related to film crystallinity. Conversely, when a seed layer was prepared by depositing 2.7nm SrO and postannealing before SrTiO3 deposition, the crystallinity of the SrTiO3 films was enhanced and the thickness dependency of the dielectric constant was reduced. As a result, the dielectric constant of 10nm SrTiO3 films was improved from 16 to 50.</description><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2007</creationdate><recordtype>article</recordtype><recordid>eNotkDtPwzAUhS0EEqUw8A-8MqTcGzd-jKjiUalSJChzlDrXwiiJI9sM_fekaqej89A3HMYeEVYIUjzjqlRSa62u2AJBqUIg6mu2AABRSFPhLbtL6Xe2VSnEgrXb0UYaaMw8ON556snm6C2fYpgoZk_pVHzFva8Fzz9-5M73Q-KH4xzW3I-ZYt8eKfIw8s8_fgg5h4GfOaGjdM9uXNsnerjokn2_ve43H8Wuft9uXnaFxcrkgpSV2mAlrbHGSAAHQlkFpSnXWhonOkS0ugMohZlHLSEY59ZtKZRbV5VYsqcz18aQUiTXTNEPbTw2CM3pmwabyzfiH7QkVbQ</recordid><startdate>20070806</startdate><enddate>20070806</enddate><creator>Ahn, Ji-Hoon</creator><creator>Kim, Ja-Yong</creator><creator>Kang, Sang-Won</creator><creator>Kim, Jin-Hyock</creator><creator>Roh, Jae-Sung</creator><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>20070806</creationdate><title>Increment of dielectric properties of SrTiO3 thin films by SrO interlayer on Ru bottom electrodes</title><author>Ahn, Ji-Hoon ; Kim, Ja-Yong ; Kang, Sang-Won ; Kim, Jin-Hyock ; Roh, Jae-Sung</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c159t-e7c689156c9c99600f037c702924869f3d111c8d002396c9ae109ff4a237f4553</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2007</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Ahn, Ji-Hoon</creatorcontrib><creatorcontrib>Kim, Ja-Yong</creatorcontrib><creatorcontrib>Kang, Sang-Won</creatorcontrib><creatorcontrib>Kim, Jin-Hyock</creatorcontrib><creatorcontrib>Roh, Jae-Sung</creatorcontrib><collection>CrossRef</collection><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Ahn, Ji-Hoon</au><au>Kim, Ja-Yong</au><au>Kang, Sang-Won</au><au>Kim, Jin-Hyock</au><au>Roh, Jae-Sung</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Increment of dielectric properties of SrTiO3 thin films by SrO interlayer on Ru bottom electrodes</atitle><jtitle>Applied physics letters</jtitle><date>2007-08-06</date><risdate>2007</risdate><volume>91</volume><issue>6</issue><issn>0003-6951</issn><eissn>1077-3118</eissn><abstract>Sr Ti O 3 thin films were deposited on Ru using plasma-enhanced atomic layer deposition with and without a SrO interlayer. When the SrTiO3 films were deposited on Ru directly, the dielectric constants of the films decreased abruptly from 65 to 16 as the thickness fell below 20nm. This change was related to film crystallinity. Conversely, when a seed layer was prepared by depositing 2.7nm SrO and postannealing before SrTiO3 deposition, the crystallinity of the SrTiO3 films was enhanced and the thickness dependency of the dielectric constant was reduced. As a result, the dielectric constant of 10nm SrTiO3 films was improved from 16 to 50.</abstract><doi>10.1063/1.2768887</doi></addata></record> |
fulltext | fulltext |
identifier | ISSN: 0003-6951 |
ispartof | Applied physics letters, 2007-08, Vol.91 (6) |
issn | 0003-6951 1077-3118 |
language | eng |
recordid | cdi_crossref_primary_10_1063_1_2768887 |
source | American Institute of Physics:Jisc Collections:Transitional Journals Agreement 2021-23 (Reading list); AIP_美国物理联合会现刊(与NSTL共建) |
title | Increment of dielectric properties of SrTiO3 thin films by SrO interlayer on Ru bottom electrodes |
url | http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-26T13%3A41%3A58IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-crossref&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Increment%20of%20dielectric%20properties%20of%20SrTiO3%20thin%20films%20by%20SrO%20interlayer%20on%20Ru%20bottom%20electrodes&rft.jtitle=Applied%20physics%20letters&rft.au=Ahn,%20Ji-Hoon&rft.date=2007-08-06&rft.volume=91&rft.issue=6&rft.issn=0003-6951&rft.eissn=1077-3118&rft_id=info:doi/10.1063/1.2768887&rft_dat=%3Ccrossref%3E10_1063_1_2768887%3C/crossref%3E%3Cgrp_id%3Ecdi_FETCH-LOGICAL-c159t-e7c689156c9c99600f037c702924869f3d111c8d002396c9ae109ff4a237f4553%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |