Zn vacancy induced room-temperature ferromagnetism in Mn-doped ZnO

X-ray absorption fine structure (XAFS) and first-principles calculations were employed to study the structure and ferromagnetism origin of Zn 0.97 Mn 0.03 O thin film grown by metal organic chemical vapor deposition. The magnetization measurements indicate that this sample is ferromagnetic at room t...

Full description

Saved in:
Bibliographic Details
Published in:Applied physics letters 2007-08, Vol.91 (6), p.062113-062113-3
Main Authors: Yan, Wensheng, Sun, Zhihu, Liu, Qinghua, Li, Zhongrui, Pan, Zhiyun, Wang, Jie, Wei, Shiqiang, Wang, Dan, Zhou, Yingxue, Zhang, Xinyi
Format: Article
Language:English
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:X-ray absorption fine structure (XAFS) and first-principles calculations were employed to study the structure and ferromagnetism origin of Zn 0.97 Mn 0.03 O thin film grown by metal organic chemical vapor deposition. The magnetization measurements indicate that this sample is ferromagnetic at room temperature. The Mn ions are located at the substitutional Zn sites as revealed by the Mn K -edge XAFS spectroscopy. Moreover, the O K -edge XAFS analysis indicated the existence of numerous Zn vacancies. Based on first-principles calculations, the authors propose that the Zn vacancy can induce the room-temperature ferromagnetism in Mn-doped ZnO.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.2769391