Misoriented domains in (0001)-GaN/(111)-Ge grown by molecular beam epitaxy

Structural characterization has been performed on (0001)-GaN epilayers grown on (111)-Ge substrates using plasma assisted molecular beam epitaxy. By combining high-resolution x-ray diffraction, transmission electron microscopy, and scanning transmission electron microscopy, it has been shown that th...

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Bibliographic Details
Published in:Applied physics letters 2007-08, Vol.91 (9)
Main Authors: Zhang, Y., McAleese, C., Xiu, H., Humphreys, C. J., Lieten, R. R., Degroote, B., Borghs, G.
Format: Article
Language:English
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Summary:Structural characterization has been performed on (0001)-GaN epilayers grown on (111)-Ge substrates using plasma assisted molecular beam epitaxy. By combining high-resolution x-ray diffraction, transmission electron microscopy, and scanning transmission electron microscopy, it has been shown that the GaN epilayer consists of misoriented domains. The domains are rotated about the GaN-[0001] (Ge-[111]) zone axis by 8° with respect to each other and by ±4° with respect to the Ge substrate. These domains need to be eliminated to reduce grain boundary defects and improve GaN crystal quality.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.2779099