Reliability properties of metal-oxide-semiconductor capacitors using HfO2 high-κ dielectric

Metal-oxide-semiconductor capacitors with atomic layer deposited HfO2 dielectric were fabricated. The charge-to-breakdown (QBD) characteristics of the metal-oxide-semiconductor structure were investigated. The Weibull slopes β with thicknesses of 9.12, 8.2, and 6.51nm are 3.42, 2.90, and 1.83, respe...

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Bibliographic Details
Published in:Applied physics letters 2007-09, Vol.91 (12)
Main Authors: Chen, Chun-Heng, Chang, Ingram Yin-Ku, Lee, Joseph Ya-Min, Chiu, Fu-Chien, Chiouand, Yan-Kai, Wu, Tai-Bor
Format: Article
Language:English
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Summary:Metal-oxide-semiconductor capacitors with atomic layer deposited HfO2 dielectric were fabricated. The charge-to-breakdown (QBD) characteristics of the metal-oxide-semiconductor structure were investigated. The Weibull slopes β with thicknesses of 9.12, 8.2, and 6.51nm are 3.42, 2.90, and 1.83, respectively. Using the cell-based analytic model, the defect sizes a0 were extracted to be about 0.98 and 1.64nm for exponent σ values of 0.6 and 1, respectively. A comparison with conventional SiO2-gated capacitors was made.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.2786588