Micromechanical resonators fabricated from lattice-matched and etch-selective GaAs∕InGaP∕GaAs heterostructures

Utilizing lattice-matched GaAs∕InGaP∕GaAs heterostructures, clean micromechanical resonators are fabricated and characterized. The nearly perfect selectivity of GaAs∕InGaP is demonstrated by realizing paddle-shaped resonators, which require significant lateral etching of the sacrificial layer. Doubl...

Full description

Saved in:
Bibliographic Details
Published in:Applied physics letters 2007-09, Vol.91 (13)
Main Authors: Shim, Seung Bo, Chun, June Sang, Kang, Seok Won, Cho, Sung Wan, Cho, Sung Woon, Park, Yun Daniel, Mohanty, Pritiraj, Kim, Nam, Kim, Jinhee
Format: Article
Language:English
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:Utilizing lattice-matched GaAs∕InGaP∕GaAs heterostructures, clean micromechanical resonators are fabricated and characterized. The nearly perfect selectivity of GaAs∕InGaP is demonstrated by realizing paddle-shaped resonators, which require significant lateral etching of the sacrificial layer. Doubly clamped beam resonators are also created, with a Q factor as high as 17 000 at 45mK. Both linear and nonlinear behaviors are observed in GaAs micromechanical resonators. Furthermore, a direct relationship between Q factor and resonant frequency is found by controlling the electrostatic force on the paddle-shaped resonators. For beam resonators, the dissipation (Q−1) as a function of temperature obeys a power law similar to silicon resonators.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.2790482