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Slow relaxation of piezoelectric response in CdZnTe ferroelectric semiconductor single crystals
The piezoelectric response in Cd 0.9 Zn 0.1 Te (CZT) semiconductor single crystals has been investigated by analyzing room temperature impedance spectra. The polarization is significantly influenced by light illumination. A slow relaxation process of the piezoelectric response has been observed with...
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Published in: | Applied physics letters 2007-10, Vol.91 (16), p.162901-162901-3 |
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container_end_page | 162901-3 |
container_issue | 16 |
container_start_page | 162901 |
container_title | Applied physics letters |
container_volume | 91 |
creator | Ke, Shanming Huang, Haitao Wang, Tao Fan, Huiqing Jie, Waiqi Chan, H. L. W. |
description | The piezoelectric response in
Cd
0.9
Zn
0.1
Te
(CZT) semiconductor single crystals has been investigated by analyzing room temperature impedance spectra. The polarization is significantly influenced by light illumination. A slow relaxation process of the piezoelectric response has been observed with a relaxation time of
37
s
, which is comparable to the discharge current results. The frequencies for piezoelectric resonance and antiresonance can be tuned to lower values when a bias field is applied and can be recovered when the bias field is removed. These phenomena may be universal for ferroelectric semiconductors and can be explained by a slow relaxation model in dielectrics. |
doi_str_mv | 10.1063/1.2799259 |
format | article |
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Cd
0.9
Zn
0.1
Te
(CZT) semiconductor single crystals has been investigated by analyzing room temperature impedance spectra. The polarization is significantly influenced by light illumination. A slow relaxation process of the piezoelectric response has been observed with a relaxation time of
37
s
, which is comparable to the discharge current results. The frequencies for piezoelectric resonance and antiresonance can be tuned to lower values when a bias field is applied and can be recovered when the bias field is removed. These phenomena may be universal for ferroelectric semiconductors and can be explained by a slow relaxation model in dielectrics.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/1.2799259</identifier><identifier>CODEN: APPLAB</identifier><language>eng</language><publisher>American Institute of Physics</publisher><ispartof>Applied physics letters, 2007-10, Vol.91 (16), p.162901-162901-3</ispartof><rights>2007 American Institute of Physics</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c284t-2728389108ccf4d790fa0b16db7d2bb3c10e02436373a0bae3c7f92063ff60ce3</citedby><cites>FETCH-LOGICAL-c284t-2728389108ccf4d790fa0b16db7d2bb3c10e02436373a0bae3c7f92063ff60ce3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://pubs.aip.org/apl/article-lookup/doi/10.1063/1.2799259$$EHTML$$P50$$Gscitation$$H</linktohtml><link.rule.ids>314,780,782,784,795,27924,27925,76383</link.rule.ids></links><search><creatorcontrib>Ke, Shanming</creatorcontrib><creatorcontrib>Huang, Haitao</creatorcontrib><creatorcontrib>Wang, Tao</creatorcontrib><creatorcontrib>Fan, Huiqing</creatorcontrib><creatorcontrib>Jie, Waiqi</creatorcontrib><creatorcontrib>Chan, H. L. W.</creatorcontrib><title>Slow relaxation of piezoelectric response in CdZnTe ferroelectric semiconductor single crystals</title><title>Applied physics letters</title><description>The piezoelectric response in
Cd
0.9
Zn
0.1
Te
(CZT) semiconductor single crystals has been investigated by analyzing room temperature impedance spectra. The polarization is significantly influenced by light illumination. A slow relaxation process of the piezoelectric response has been observed with a relaxation time of
37
s
, which is comparable to the discharge current results. The frequencies for piezoelectric resonance and antiresonance can be tuned to lower values when a bias field is applied and can be recovered when the bias field is removed. These phenomena may be universal for ferroelectric semiconductors and can be explained by a slow relaxation model in dielectrics.</description><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2007</creationdate><recordtype>article</recordtype><recordid>eNp1kE1LAzEURYMoWKsL_0G2Lqa-JO1kshGk-AUFF9aNmzDz5kUi00lJRrT-elNb6MrV5fEOF-5h7FLARECprsVEamPkzByxkQCtCyVEdcxGAKCK0szEKTtL6SOfM6nUiNmXLnzxSF39XQ8-9Dw4vvb0E6gjHKLH_Evr0Cfivufz9q1fEncU4wFItPIY-vYThxB58v17RxzjJg11l87ZictBF_scs9f7u-X8sVg8PzzNbxcFymo6FFLLSlVGQIXopq024GpoRNk2upVNo1AAgZyqUmmVHzUp1M7IvNi5EpDUmF3tejGGlCI5u45-VceNFWC3ZqywezOZvdmxCf3wt_p_eKvHHvTYkIvVL03gbXs</recordid><startdate>20071015</startdate><enddate>20071015</enddate><creator>Ke, Shanming</creator><creator>Huang, Haitao</creator><creator>Wang, Tao</creator><creator>Fan, Huiqing</creator><creator>Jie, Waiqi</creator><creator>Chan, H. L. W.</creator><general>American Institute of Physics</general><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>20071015</creationdate><title>Slow relaxation of piezoelectric response in CdZnTe ferroelectric semiconductor single crystals</title><author>Ke, Shanming ; Huang, Haitao ; Wang, Tao ; Fan, Huiqing ; Jie, Waiqi ; Chan, H. L. W.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c284t-2728389108ccf4d790fa0b16db7d2bb3c10e02436373a0bae3c7f92063ff60ce3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2007</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Ke, Shanming</creatorcontrib><creatorcontrib>Huang, Haitao</creatorcontrib><creatorcontrib>Wang, Tao</creatorcontrib><creatorcontrib>Fan, Huiqing</creatorcontrib><creatorcontrib>Jie, Waiqi</creatorcontrib><creatorcontrib>Chan, H. L. W.</creatorcontrib><collection>CrossRef</collection><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Ke, Shanming</au><au>Huang, Haitao</au><au>Wang, Tao</au><au>Fan, Huiqing</au><au>Jie, Waiqi</au><au>Chan, H. L. W.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Slow relaxation of piezoelectric response in CdZnTe ferroelectric semiconductor single crystals</atitle><jtitle>Applied physics letters</jtitle><date>2007-10-15</date><risdate>2007</risdate><volume>91</volume><issue>16</issue><spage>162901</spage><epage>162901-3</epage><pages>162901-162901-3</pages><issn>0003-6951</issn><eissn>1077-3118</eissn><coden>APPLAB</coden><abstract>The piezoelectric response in
Cd
0.9
Zn
0.1
Te
(CZT) semiconductor single crystals has been investigated by analyzing room temperature impedance spectra. The polarization is significantly influenced by light illumination. A slow relaxation process of the piezoelectric response has been observed with a relaxation time of
37
s
, which is comparable to the discharge current results. The frequencies for piezoelectric resonance and antiresonance can be tuned to lower values when a bias field is applied and can be recovered when the bias field is removed. These phenomena may be universal for ferroelectric semiconductors and can be explained by a slow relaxation model in dielectrics.</abstract><pub>American Institute of Physics</pub><doi>10.1063/1.2799259</doi></addata></record> |
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source | American Institute of Physics (AIP) Publications; American Institute of Physics:Jisc Collections:Transitional Journals Agreement 2021-23 (Reading list) |
title | Slow relaxation of piezoelectric response in CdZnTe ferroelectric semiconductor single crystals |
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