Temperature dependence of polarized electroluminescence from nonpolar m -plane InGaN-based light emitting diodes

An accurate method of estimating polarized light emission was presented for nonpolar m -plane InGaN-based blue light emitting diodes, where the unpolarized component caused by unintentional light scattering was eliminated as noise. The polarization ratios of electroluminescence (EL) at 300 and 100 K...

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Bibliographic Details
Published in:Applied physics letters 2007-10, Vol.91 (17), p.171110-171110-3
Main Authors: Nakagawa, Satoshi, Tsujimura, Hiroki, Okamoto, Kuniyoshi, Kubota, Masashi, Ohta, Hiroaki
Format: Article
Language:English
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Summary:An accurate method of estimating polarized light emission was presented for nonpolar m -plane InGaN-based blue light emitting diodes, where the unpolarized component caused by unintentional light scattering was eliminated as noise. The polarization ratios of electroluminescence (EL) at 300 and 100 K were 0.85 and 0.98, respectively. The energy difference between the highest and the second highest valence bands was estimated to be 129 meV from the temperature dependence of the spectrally integrated EL intensities under the assumption of Fermi statistics. This value agreed with the one ( = 118 meV ) obtained directly from the difference of the EL peak energies between two polarized components, the electric fields perpendicular and parallel to the c axis.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.2800817