Low resistance, nonalloyed Ohmic contacts to InGaAs

We report extremely low specific contact resistivity ( ρ c ) nonalloyed Ohmic contacts to n -type In 0.53 Ga 0.47 As , lattice matched to InP. Contacts were formed by oxidizing the semiconductor surface through exposure to ultraviolet-generated ozone, subsequently immersing the wafer in ammonium hyd...

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Bibliographic Details
Published in:Applied physics letters 2007-11, Vol.91 (19), p.192114-192114-3
Main Authors: Crook, Adam M., Lind, Erik, Griffith, Zach, Rodwell, Mark J. W., Zimmerman, Jeremy D., Gossard, Arthur C., Bank, Seth R.
Format: Article
Language:English
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Summary:We report extremely low specific contact resistivity ( ρ c ) nonalloyed Ohmic contacts to n -type In 0.53 Ga 0.47 As , lattice matched to InP. Contacts were formed by oxidizing the semiconductor surface through exposure to ultraviolet-generated ozone, subsequently immersing the wafer in ammonium hydroxide ( N H 4 O H , 14.8 normality), and finally depositing either Ti ∕ Pd ∕ Au contact metal by electron-beam evaporation or TiW contact metal by vacuum sputtering. Ti ∕ Pd ∕ Au contacts exhibited ρ c of ( 0.73 ± 0.44 ) Ω μ m 2 -i.e., ( 7.3 ± 4.4 ) × 10 − 9 Ω cm 2 -while TiW contacts exhibited ρ c of ( 0.84 ± 0.48 ) Ω μ m 2 . The TiW contacts are thermally stable, showing no observable degradation in resistivity after a 500 ° C annealing of 1 min duration.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.2806235