Loading…
Low resistance, nonalloyed Ohmic contacts to InGaAs
We report extremely low specific contact resistivity ( ρ c ) nonalloyed Ohmic contacts to n -type In 0.53 Ga 0.47 As , lattice matched to InP. Contacts were formed by oxidizing the semiconductor surface through exposure to ultraviolet-generated ozone, subsequently immersing the wafer in ammonium hyd...
Saved in:
| Published in: | Applied physics letters 2007-11, Vol.91 (19), p.192114-192114-3 |
|---|---|
| Main Authors: | , , , , , , |
| Format: | Article |
| Language: | English |
| Citations: | Items that this one cites Items that cite this one |
| Online Access: | Get full text |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| cited_by | cdi_FETCH-LOGICAL-c349t-69fd55828e94c7c57ae4e824c9ee8e016b4f6549859670226eebe0e3d12fb8463 |
|---|---|
| cites | cdi_FETCH-LOGICAL-c349t-69fd55828e94c7c57ae4e824c9ee8e016b4f6549859670226eebe0e3d12fb8463 |
| container_end_page | 192114-3 |
| container_issue | 19 |
| container_start_page | 192114 |
| container_title | Applied physics letters |
| container_volume | 91 |
| creator | Crook, Adam M. Lind, Erik Griffith, Zach Rodwell, Mark J. W. Zimmerman, Jeremy D. Gossard, Arthur C. Bank, Seth R. |
| description | We report extremely low specific contact resistivity
(
ρ
c
)
nonalloyed Ohmic contacts to
n
-type
In
0.53
Ga
0.47
As
, lattice matched to InP. Contacts were formed by oxidizing the semiconductor surface through exposure to ultraviolet-generated ozone, subsequently immersing the wafer in ammonium hydroxide (
N
H
4
O
H
, 14.8 normality), and finally depositing either
Ti
∕
Pd
∕
Au
contact metal by electron-beam evaporation or TiW contact metal by vacuum sputtering.
Ti
∕
Pd
∕
Au
contacts exhibited
ρ
c
of
(
0.73
±
0.44
)
Ω
μ
m
2
-i.e.,
(
7.3
±
4.4
)
×
10
−
9
Ω
cm
2
-while TiW contacts exhibited
ρ
c
of
(
0.84
±
0.48
)
Ω
μ
m
2
. The TiW contacts are thermally stable, showing no observable degradation in resistivity after a
500
°
C
annealing of
1
min
duration. |
| doi_str_mv | 10.1063/1.2806235 |
| format | article |
| fullrecord | <record><control><sourceid>scitation_cross</sourceid><recordid>TN_cdi_crossref_primary_10_1063_1_2806235</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>apl</sourcerecordid><originalsourceid>FETCH-LOGICAL-c349t-69fd55828e94c7c57ae4e824c9ee8e016b4f6549859670226eebe0e3d12fb8463</originalsourceid><addsrcrecordid>eNp1z01LAzEQgOEgCq7Vg_8gV8Gt-f44eChFa2GhFz2HbHYWV7aJbALSf--WFjx5GgZeZngQuqdkSYniT3TJDFGMywtUUaJ1zSk1l6gihPBaWUmv0U3OX_MqGecV4k36wRPkIRcfAzzimKIfx3SADu8-90PAIcXiQ8m4JLyNG7_Kt-iq92OGu_NcoI_Xl_f1W93sNtv1qqkDF7bM3_pOSsMMWBF0kNqDAMNEsAAGCFWt6JUU1kirNGFMAbRAgHeU9a0Rii_Qw-lumFLOE_Tuexr2fjo4StxR66g7a-f2-dTmMBRfhhT_j2ey-yO7o5j_AiD8Wqo</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Low resistance, nonalloyed Ohmic contacts to InGaAs</title><source>American Institute of Physics (AIP) Publications</source><source>American Institute of Physics:Jisc Collections:Transitional Journals Agreement 2021-23 (Reading list)</source><creator>Crook, Adam M. ; Lind, Erik ; Griffith, Zach ; Rodwell, Mark J. W. ; Zimmerman, Jeremy D. ; Gossard, Arthur C. ; Bank, Seth R.</creator><creatorcontrib>Crook, Adam M. ; Lind, Erik ; Griffith, Zach ; Rodwell, Mark J. W. ; Zimmerman, Jeremy D. ; Gossard, Arthur C. ; Bank, Seth R.</creatorcontrib><description>We report extremely low specific contact resistivity
(
ρ
c
)
nonalloyed Ohmic contacts to
n
-type
In
0.53
Ga
0.47
As
, lattice matched to InP. Contacts were formed by oxidizing the semiconductor surface through exposure to ultraviolet-generated ozone, subsequently immersing the wafer in ammonium hydroxide (
N
H
4
O
H
, 14.8 normality), and finally depositing either
Ti
∕
Pd
∕
Au
contact metal by electron-beam evaporation or TiW contact metal by vacuum sputtering.
Ti
∕
Pd
∕
Au
contacts exhibited
ρ
c
of
(
0.73
±
0.44
)
Ω
μ
m
2
-i.e.,
(
7.3
±
4.4
)
×
10
−
9
Ω
cm
2
-while TiW contacts exhibited
ρ
c
of
(
0.84
±
0.48
)
Ω
μ
m
2
. The TiW contacts are thermally stable, showing no observable degradation in resistivity after a
500
°
C
annealing of
1
min
duration.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/1.2806235</identifier><identifier>CODEN: APPLAB</identifier><language>eng</language><publisher>American Institute of Physics</publisher><ispartof>Applied physics letters, 2007-11, Vol.91 (19), p.192114-192114-3</ispartof><rights>2007 American Institute of Physics</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c349t-69fd55828e94c7c57ae4e824c9ee8e016b4f6549859670226eebe0e3d12fb8463</citedby><cites>FETCH-LOGICAL-c349t-69fd55828e94c7c57ae4e824c9ee8e016b4f6549859670226eebe0e3d12fb8463</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://pubs.aip.org/apl/article-lookup/doi/10.1063/1.2806235$$EHTML$$P50$$Gscitation$$H</linktohtml><link.rule.ids>314,776,778,780,791,27901,27902,76352</link.rule.ids></links><search><creatorcontrib>Crook, Adam M.</creatorcontrib><creatorcontrib>Lind, Erik</creatorcontrib><creatorcontrib>Griffith, Zach</creatorcontrib><creatorcontrib>Rodwell, Mark J. W.</creatorcontrib><creatorcontrib>Zimmerman, Jeremy D.</creatorcontrib><creatorcontrib>Gossard, Arthur C.</creatorcontrib><creatorcontrib>Bank, Seth R.</creatorcontrib><title>Low resistance, nonalloyed Ohmic contacts to InGaAs</title><title>Applied physics letters</title><description>We report extremely low specific contact resistivity
(
ρ
c
)
nonalloyed Ohmic contacts to
n
-type
In
0.53
Ga
0.47
As
, lattice matched to InP. Contacts were formed by oxidizing the semiconductor surface through exposure to ultraviolet-generated ozone, subsequently immersing the wafer in ammonium hydroxide (
N
H
4
O
H
, 14.8 normality), and finally depositing either
Ti
∕
Pd
∕
Au
contact metal by electron-beam evaporation or TiW contact metal by vacuum sputtering.
Ti
∕
Pd
∕
Au
contacts exhibited
ρ
c
of
(
0.73
±
0.44
)
Ω
μ
m
2
-i.e.,
(
7.3
±
4.4
)
×
10
−
9
Ω
cm
2
-while TiW contacts exhibited
ρ
c
of
(
0.84
±
0.48
)
Ω
μ
m
2
. The TiW contacts are thermally stable, showing no observable degradation in resistivity after a
500
°
C
annealing of
1
min
duration.</description><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2007</creationdate><recordtype>article</recordtype><recordid>eNp1z01LAzEQgOEgCq7Vg_8gV8Gt-f44eChFa2GhFz2HbHYWV7aJbALSf--WFjx5GgZeZngQuqdkSYniT3TJDFGMywtUUaJ1zSk1l6gihPBaWUmv0U3OX_MqGecV4k36wRPkIRcfAzzimKIfx3SADu8-90PAIcXiQ8m4JLyNG7_Kt-iq92OGu_NcoI_Xl_f1W93sNtv1qqkDF7bM3_pOSsMMWBF0kNqDAMNEsAAGCFWt6JUU1kirNGFMAbRAgHeU9a0Rii_Qw-lumFLOE_Tuexr2fjo4StxR66g7a-f2-dTmMBRfhhT_j2ey-yO7o5j_AiD8Wqo</recordid><startdate>20071105</startdate><enddate>20071105</enddate><creator>Crook, Adam M.</creator><creator>Lind, Erik</creator><creator>Griffith, Zach</creator><creator>Rodwell, Mark J. W.</creator><creator>Zimmerman, Jeremy D.</creator><creator>Gossard, Arthur C.</creator><creator>Bank, Seth R.</creator><general>American Institute of Physics</general><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>20071105</creationdate><title>Low resistance, nonalloyed Ohmic contacts to InGaAs</title><author>Crook, Adam M. ; Lind, Erik ; Griffith, Zach ; Rodwell, Mark J. W. ; Zimmerman, Jeremy D. ; Gossard, Arthur C. ; Bank, Seth R.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c349t-69fd55828e94c7c57ae4e824c9ee8e016b4f6549859670226eebe0e3d12fb8463</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2007</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Crook, Adam M.</creatorcontrib><creatorcontrib>Lind, Erik</creatorcontrib><creatorcontrib>Griffith, Zach</creatorcontrib><creatorcontrib>Rodwell, Mark J. W.</creatorcontrib><creatorcontrib>Zimmerman, Jeremy D.</creatorcontrib><creatorcontrib>Gossard, Arthur C.</creatorcontrib><creatorcontrib>Bank, Seth R.</creatorcontrib><collection>CrossRef</collection><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Crook, Adam M.</au><au>Lind, Erik</au><au>Griffith, Zach</au><au>Rodwell, Mark J. W.</au><au>Zimmerman, Jeremy D.</au><au>Gossard, Arthur C.</au><au>Bank, Seth R.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Low resistance, nonalloyed Ohmic contacts to InGaAs</atitle><jtitle>Applied physics letters</jtitle><date>2007-11-05</date><risdate>2007</risdate><volume>91</volume><issue>19</issue><spage>192114</spage><epage>192114-3</epage><pages>192114-192114-3</pages><issn>0003-6951</issn><eissn>1077-3118</eissn><coden>APPLAB</coden><abstract>We report extremely low specific contact resistivity
(
ρ
c
)
nonalloyed Ohmic contacts to
n
-type
In
0.53
Ga
0.47
As
, lattice matched to InP. Contacts were formed by oxidizing the semiconductor surface through exposure to ultraviolet-generated ozone, subsequently immersing the wafer in ammonium hydroxide (
N
H
4
O
H
, 14.8 normality), and finally depositing either
Ti
∕
Pd
∕
Au
contact metal by electron-beam evaporation or TiW contact metal by vacuum sputtering.
Ti
∕
Pd
∕
Au
contacts exhibited
ρ
c
of
(
0.73
±
0.44
)
Ω
μ
m
2
-i.e.,
(
7.3
±
4.4
)
×
10
−
9
Ω
cm
2
-while TiW contacts exhibited
ρ
c
of
(
0.84
±
0.48
)
Ω
μ
m
2
. The TiW contacts are thermally stable, showing no observable degradation in resistivity after a
500
°
C
annealing of
1
min
duration.</abstract><pub>American Institute of Physics</pub><doi>10.1063/1.2806235</doi></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0003-6951 |
| ispartof | Applied physics letters, 2007-11, Vol.91 (19), p.192114-192114-3 |
| issn | 0003-6951 1077-3118 |
| language | eng |
| recordid | cdi_crossref_primary_10_1063_1_2806235 |
| source | American Institute of Physics (AIP) Publications; American Institute of Physics:Jisc Collections:Transitional Journals Agreement 2021-23 (Reading list) |
| title | Low resistance, nonalloyed Ohmic contacts to InGaAs |
| url | http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-13T11%3A27%3A30IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-scitation_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Low%20resistance,%20nonalloyed%20Ohmic%20contacts%20to%20InGaAs&rft.jtitle=Applied%20physics%20letters&rft.au=Crook,%20Adam%20M.&rft.date=2007-11-05&rft.volume=91&rft.issue=19&rft.spage=192114&rft.epage=192114-3&rft.pages=192114-192114-3&rft.issn=0003-6951&rft.eissn=1077-3118&rft.coden=APPLAB&rft_id=info:doi/10.1063/1.2806235&rft_dat=%3Cscitation_cross%3Eapl%3C/scitation_cross%3E%3Cgrp_id%3Ecdi_FETCH-LOGICAL-c349t-69fd55828e94c7c57ae4e824c9ee8e016b4f6549859670226eebe0e3d12fb8463%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |