Kondo effect in a semiconductor quantum dot coupled to ferromagnetic electrodes

Using a laterally fabricated quantum-dot (QD) spin-valve device, we experimentally study the Kondo effect in the electron transport through a semiconductor QD with an odd number of electrons (N). In a parallel magnetic configuration of the ferromagnetic electrodes, the Kondo resonance at N=3 splits...

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Bibliographic Details
Published in:Applied physics letters 2007-12, Vol.91 (23)
Main Authors: Hamaya, K., Kitabatake, M., Shibata, K., Jung, M., Kawamura, M., Hirakawa, K., Machida, T., Taniyama, T., Ishida, S., Arakawa, Y.
Format: Article
Language:English
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Summary:Using a laterally fabricated quantum-dot (QD) spin-valve device, we experimentally study the Kondo effect in the electron transport through a semiconductor QD with an odd number of electrons (N). In a parallel magnetic configuration of the ferromagnetic electrodes, the Kondo resonance at N=3 splits clearly without external magnetic fields. With applying magnetic fields (B), the splitting is gradually reduced, and then the Kondo effect is almost restored at B=1.2T. This means that, in the Kondo regime, an inverse effective magnetic field of B∼1.2T can be applied to the QD in the parallel magnetic configuration of the ferromagnetic electrodes.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.2820445