Photovoltaic response of a polymer p - i - n junction

We report the photovoltaic characterization of a polymer p - i - n junction, realized by in situ electrochemical doping and thermal cycling. The planar, "frozen" p - i - n junction exhibits record-high open-circuit voltage up to 2.25 V , and in-plane short-circuit current density in excess...

Full description

Saved in:
Bibliographic Details
Published in:Applied physics letters 2007-12, Vol.91 (23), p.233509-233509-3
Main Authors: Zhang, Yanguang, Hu, Yufeng, Gao, Jun
Format: Article
Language:English
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:We report the photovoltaic characterization of a polymer p - i - n junction, realized by in situ electrochemical doping and thermal cycling. The planar, "frozen" p - i - n junction exhibits record-high open-circuit voltage up to 2.25 V , and in-plane short-circuit current density in excess of 10 mA ∕ cm 2 under simulated sunlight ( ∼ 300 mW ∕ cm 2 ) . Our results suggest that built-in potential close to the polymer energy gap in magnitude can be obtained in a polymer device structure without the use of dissimilar electrodes, and large short-circuit current density is possible without the use of strong electron acceptors, which limits the open-circuit voltage.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.2822993