Conduction regime in innovative carbon nanotube via interconnect architectures

• Published in: Applied physics letters 2007-12, Vol.91 (25), p.252107-252107-3
• Main Authors: Coiffic, J. C., Fayolle, M., Maitrejean, S., Foa Torres, L. E. F., Le Poche, H.
• Format: Article
• Language: English
• ISSN: 0003-6951; 1077-3118
• DOI: 10.1063/1.2826274

We report on the electrical properties of multiwall carbon nanotube based via interconnects over a broad range of temperature and bias voltage. By using innovating processing techniques, high density nanotube vias have been fabricated from single damascene and double damascene via architectures with diameters down to 140 nm . For single damascene structures, resistances as low as 20 Ω have been achieved for 300 nm via size. Further measurements show that the conductance increases with temperature following an exponential law, which can be interpreted in terms of a disordered quasi-one dimensional conduction regime.