Selective formation of Ohmic junctions and Schottky barriers with electrodeposited ZnO

Constant-potential electrochemical synthesis of ZnO on metal substrates enables selective formation of either Ohmic or Schottky-barrier contacts. Using a mildly acidic nitrate-based aqueous electrolyte, there is a substrate-dependent deposition potential below which electrodeposited ZnO heterojuncti...

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Bibliographic Details
Published in:Applied physics letters 2008-01, Vol.92 (1)
Main Authors: Chatman, Shawn, Ryan, Bernard J., Poduska, Kristin M.
Format: Article
Language:English
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Summary:Constant-potential electrochemical synthesis of ZnO on metal substrates enables selective formation of either Ohmic or Schottky-barrier contacts. Using a mildly acidic nitrate-based aqueous electrolyte, there is a substrate-dependent deposition potential below which electrodeposited ZnO heterojunctions display Schottky response with high contact resistances (∼105Ω) and above which Ohmic behavior and low contact resistances (∼1Ω) occur. Voltammetric evidence for Zn metal deposition, in conjunction with Schottky-barrier heights that are consistent with values expected for a ZnO–Zn junction, suggests that more negative deposition potentials create a Zn-based interface between the substrate and ZnO that leads to rectifying behavior.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.2828702