Physical properties and efficiency of GaNP light emitting diodes

Ga N P ∕ Ga P is promising for yellow-amber-red light emitting diodes (LEDs). In this study, pressure and temperature dependent electroluminescence and photocurrent measurements on bulk Ga P ∕ Ga N 0.006 P 0.994 ∕ Ga P LED structures are presented. Below ∼ 110 K , emission is observed from several l...

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Bibliographic Details
Published in:Applied physics letters 2008-01, Vol.92 (2), p.021101-021101-3
Main Authors: Chamings, J., Ahmed, S., Sweeney, S. J., Odnoblyudov, V. A., Tu, C. W.
Format: Article
Language:English
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Summary:Ga N P ∕ Ga P is promising for yellow-amber-red light emitting diodes (LEDs). In this study, pressure and temperature dependent electroluminescence and photocurrent measurements on bulk Ga P ∕ Ga N 0.006 P 0.994 ∕ Ga P LED structures are presented. Below ∼ 110 K , emission is observed from several localized nitrogen states. At room temperature, the band-edge energy increases weakly with pressure at a rate of + 1.6 meV ∕ kbar , substantially lower than the Γ band gap of GaP ( + 9.5 meV ∕ kbar ) . Thus, despite the multiplicity of nitrogen levels, the band anticrossing model reasonably describes this system based on an average of the nitrogen states. Furthermore, carrier leakage into the X minima of GaP reduces the efficiency in GaNP-LEDs with increasing pressure.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.2830696