Switching behavior of La1−xCaxMnO3 thin films grown on SrTiO3 substrates

• Published in: Journal of applied physics 2008-04, Vol.103 (7)
• Main Authors: Hu, F. X., Sun, J. R., Shen, B. G., Rong, C. B., Gao, J.
• Format: Article
• Language: English
• ISSN: 0021-8979; 1089-7550
• DOI: 10.1063/1.2831327

We report the switching behavior of resistive states induced by current flowing in La1−xCaxMnO3 films. The transport behavior upon treatments by applying a large dc current has been investigated in the absence of magnetic field. A switching from low to high resistive state was found upon applying a large dc current for the both compositions. The critical currents for the switching are 10.5mA (density of 2.3×103A∕cm2) and 6.7mA (density of 1.6×103A∕cm2) for compositions x=0.2 and 0.3, respectively. Our repeated measurements indicate that the high resistive state appeared in the film x=0.2 is much stable. Exposing the sample in air and room temperature does not cause any change of the transport properties. However, for the film with x=0.3, the induced high resistive state behaves with unstable characteristics. Keeping the sample at a low temperature of 20K, a relaxation to a higher resistive state takes place. The mechanism of phase separation was taken into account in the interpretation of the observed phenomena.