Enhanced dielectric properties in single crystal-like BiFeO3 thin films grown by flux-mediated epitaxy

We have fabricated single crystal-like BiFeO3 (BFO) thin films by flux-mediated epitaxy using pulsed laser deposition (PLD). The Bi–Cu–O flux composition and its thickness were optimized using composition spread, thickness gradient, and temperature gradient libraries. The optimized BFO thin films gr...

Full description

Saved in:
Bibliographic Details
Published in:Applied physics letters 2008-01, Vol.92 (1)
Main Authors: Lim, S.-H., Murakami, M., Yang, J. H., Young, S.-Y., Hattrick-Simpers, J., Wuttig, M., Salamanca-Riba, L. G., Takeuchi, I.
Format: Article
Language:English
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:We have fabricated single crystal-like BiFeO3 (BFO) thin films by flux-mediated epitaxy using pulsed laser deposition (PLD). The Bi–Cu–O flux composition and its thickness were optimized using composition spread, thickness gradient, and temperature gradient libraries. The optimized BFO thin films grown with this technique showed larger grain size of ∼2μm and higher dielectric constant in the range of 260–340 than those for standard PLD grown films. In addition, the leakage current density of the films was reduced by two orders of magnitude compared to that of standard PLD grown films.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.2831665