Transparent organic light-emitting diodes consisting of a metal oxide multilayer cathode

The authors have developed a semitransparent, multilayered cathode of indium tin oxide (ITO)/Ag/tungsten oxide ( W O 3 ) for transparent organic light-emitting diodes. The device showed a weak negative differential resistance (NDR), until the operating voltage of 8 V was reached. NDR was due to the...

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Bibliographic Details
Published in:Applied physics letters 2008-01, Vol.92 (2), p.023306-023306-3
Main Authors: Ryu, Seung Yoon, Noh, Joo Hyon, Hwang, Byoung Har, Kim, Chang Su, Jo, Sung Jin, Kim, Jong Tae, Hwang, Hyeon Seok, Baik, Hong Koo, Jeong, Hee Seong, Lee, Chang Ho, Song, Seung Yong, Choi, Seung Ho, Park, Si Young
Format: Article
Language:English
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Summary:The authors have developed a semitransparent, multilayered cathode of indium tin oxide (ITO)/Ag/tungsten oxide ( W O 3 ) for transparent organic light-emitting diodes. The device showed a weak negative differential resistance (NDR), until the operating voltage of 8 V was reached. NDR was due to the resonant tunneling by both the quantum barrier and quantum well. The silver oxide ( Ag 2 O ) on the Ag metal was confirmed by x-ray photoelectron spectroscopy, and the energy levels of Ag 2 O were quantized due to the quantum size effect and this produced the resonant tunneling channels. The device using ITO ∕ Ag ∕ W O 3 with a Li F ∕ Al bilayer was superior to those devices which only used ITO or W O 3 , mainly because the out coupling was enhanced by employing a W O 3 material, which is much more transparent than ITO.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.2835044