Surface micromachined, complementary-metal-oxide-semiconductor compatible tunable capacitor with 14:1 continuous tuning range

This letter reports a surface micromachined, complementary-metal-oxide-semiconductor compatible tunable capacitor utilizing a simply supported bridge structure, unlike traditional microelectromechanical-system bridges that use fully clamped boundary condition at the anchors. Through the implementati...

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Bibliographic Details
Published in:Applied physics letters 2008-01, Vol.92 (4), p.044103-044103-3
Main Authors: Lee, Chuang-Yuan, Pang, Wei, Chen, Shih-Jui, Chi, Derrick, Yu, Hongyu, Kim, Eun Sok
Format: Article
Language:English
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Summary:This letter reports a surface micromachined, complementary-metal-oxide-semiconductor compatible tunable capacitor utilizing a simply supported bridge structure, unlike traditional microelectromechanical-system bridges that use fully clamped boundary condition at the anchors. Through the implementation of a simply supported bridge driven by two 100 - μ m -long ZnO-actuated cantilevers, a compact tunable capacitor has been fabricated on silicon without any warping and shown to be capable of a 1400% continuous tuning from 0.13 to 1.82 pF .
ISSN:0003-6951
1077-3118
DOI:10.1063/1.2838447