Impurity bound-to-unbound terahertz sensors based on beryllium and silicon δ-doped GaAs∕AlAs multiple quantum wells

Beryllium and silicon δ-doped GaAs∕AlAs multiple quantum wells (MQWs) were designed and fabricated for selective sensing of terahertz radiation. Optical characterization of the structures by photoreflectance spectroscopy has indicated a presence of built-in electric fields–from 18 up to 49kV∕cm depe...

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Bibliographic Details
Published in:Applied physics letters 2008-02, Vol.92 (5)
Main Authors: Seliuta, D., Kavaliauskas, J., Čechavičius, B., Balakauskas, S., Valušis, G., Sherliker, B., Halsall, M. P., Harrison, P., Lachab, M., Khanna, S. P., Linfield, E. H.
Format: Article
Language:English
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Summary:Beryllium and silicon δ-doped GaAs∕AlAs multiple quantum wells (MQWs) were designed and fabricated for selective sensing of terahertz radiation. Optical characterization of the structures by photoreflectance spectroscopy has indicated a presence of built-in electric fields–from 18 up to 49kV∕cm depending on the structure design–located mainly in the cap and buffer layers, but do not penetrating into the MQWs region. Terahertz sensing under normal incidence via impurity bound-to-unbound transitions is demonstrated in photocurrent experiments within 0.6–4.2THz in silicon-doped MQWs and 3.5–7.3THz range in beryllium-doped MQWs at low temperatures.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.2839585