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Leakage mechanisms in bismuth ferrite-lead titanate thin films on Pt∕Si substrates
( 1 − x ) Bi Fe O 3 – x Pb Ti O 3 (0.5
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| Published in: | Applied physics letters 2008-02, Vol.92 (7) |
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| Main Authors: | , , |
| Format: | Article |
| Language: | English |
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| cited_by | cdi_FETCH-LOGICAL-c225t-61d6dabde607264bbc7e8f562d00633137a69b8c525b998cedeb7f9dbfddba6a3 |
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| cites | cdi_FETCH-LOGICAL-c225t-61d6dabde607264bbc7e8f562d00633137a69b8c525b998cedeb7f9dbfddba6a3 |
| container_end_page | |
| container_issue | 7 |
| container_start_page | |
| container_title | Applied physics letters |
| container_volume | 92 |
| creator | Khan, Mikael A. Comyn, Tim P. Bell, Andrew J. |
| description | ( 1 − x ) Bi Fe O 3 – x Pb Ti O 3 (0.5 |
| doi_str_mv | 10.1063/1.2839598 |
| format | article |
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An insight into the nature of leakage mechanisms in the films is presented. Films with x=0.4 and 0.5 exhibit lower leakage currents as compared to x=0.3 films. At applied fields above 190kVcm−1, in the region of the coercive field of these films, x=0.4 and 0.5 exhibit a Poole–Frenkel mechanism while films with x=0.3 exhibit a combination of space charge limited current and the Schottky effect.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/1.2839598</identifier><language>eng</language><ispartof>Applied physics letters, 2008-02, Vol.92 (7)</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c225t-61d6dabde607264bbc7e8f562d00633137a69b8c525b998cedeb7f9dbfddba6a3</citedby><cites>FETCH-LOGICAL-c225t-61d6dabde607264bbc7e8f562d00633137a69b8c525b998cedeb7f9dbfddba6a3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,782,784,27924,27925</link.rule.ids></links><search><creatorcontrib>Khan, Mikael A.</creatorcontrib><creatorcontrib>Comyn, Tim P.</creatorcontrib><creatorcontrib>Bell, Andrew J.</creatorcontrib><title>Leakage mechanisms in bismuth ferrite-lead titanate thin films on Pt∕Si substrates</title><title>Applied physics letters</title><description>( 1 − x ) Bi Fe O 3 – x Pb Ti O 3 (0.5<x<0.3) thin films have been reported to exhibit high remanent polarizations but device integration is hindered by the presence of leakage currents. An insight into the nature of leakage mechanisms in the films is presented. Films with x=0.4 and 0.5 exhibit lower leakage currents as compared to x=0.3 films. At applied fields above 190kVcm−1, in the region of the coercive field of these films, x=0.4 and 0.5 exhibit a Poole–Frenkel mechanism while films with x=0.3 exhibit a combination of space charge limited current and the Schottky effect.</description><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2008</creationdate><recordtype>article</recordtype><recordid>eNotUEtKBDEUDKJgO7rwBtm6yJiPSTpLGfxBg4Ljukk6L3Z0ukeSzMIbeAEv6EmMOKuqooqCKoTOGV0yqsQlW_JWGGnaA9QwqjURjLWHqKGUCqKMZMfoJOe3KiUXokHrDuy7fQU8wTDaOeYp4zhjV8mujDhASrEA2YD1uMRiZ1sAl7FGQtzU7HbGT-Xn6_s54rxzuaTq51N0FOwmw9keF-jl9ma9uifd493D6rojA-eyEMW88tZ5UFRzdeXcoKENUnFP6xTBhLbKuHaQXDpj2gE8OB2Md8F7Z5UVC3Tx3zukbc4JQv-R4mTTZ89o_3dHz_r9HeIXNJ1Ulw</recordid><startdate>20080218</startdate><enddate>20080218</enddate><creator>Khan, Mikael A.</creator><creator>Comyn, Tim P.</creator><creator>Bell, Andrew J.</creator><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>20080218</creationdate><title>Leakage mechanisms in bismuth ferrite-lead titanate thin films on Pt∕Si substrates</title><author>Khan, Mikael A. ; Comyn, Tim P. ; Bell, Andrew J.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c225t-61d6dabde607264bbc7e8f562d00633137a69b8c525b998cedeb7f9dbfddba6a3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2008</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Khan, Mikael A.</creatorcontrib><creatorcontrib>Comyn, Tim P.</creatorcontrib><creatorcontrib>Bell, Andrew J.</creatorcontrib><collection>CrossRef</collection><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Khan, Mikael A.</au><au>Comyn, Tim P.</au><au>Bell, Andrew J.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Leakage mechanisms in bismuth ferrite-lead titanate thin films on Pt∕Si substrates</atitle><jtitle>Applied physics letters</jtitle><date>2008-02-18</date><risdate>2008</risdate><volume>92</volume><issue>7</issue><issn>0003-6951</issn><eissn>1077-3118</eissn><abstract>( 1 − x ) Bi Fe O 3 – x Pb Ti O 3 (0.5<x<0.3) thin films have been reported to exhibit high remanent polarizations but device integration is hindered by the presence of leakage currents. An insight into the nature of leakage mechanisms in the films is presented. Films with x=0.4 and 0.5 exhibit lower leakage currents as compared to x=0.3 films. At applied fields above 190kVcm−1, in the region of the coercive field of these films, x=0.4 and 0.5 exhibit a Poole–Frenkel mechanism while films with x=0.3 exhibit a combination of space charge limited current and the Schottky effect.</abstract><doi>10.1063/1.2839598</doi></addata></record> |
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| identifier | ISSN: 0003-6951 |
| ispartof | Applied physics letters, 2008-02, Vol.92 (7) |
| issn | 0003-6951 1077-3118 |
| language | eng |
| recordid | cdi_crossref_primary_10_1063_1_2839598 |
| source | American Institute of Physics:Jisc Collections:Transitional Journals Agreement 2021-23 (Reading list); AIP Journals (American Institute of Physics) |
| title | Leakage mechanisms in bismuth ferrite-lead titanate thin films on Pt∕Si substrates |
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