Thermally stable amorphous (AlMoNbSiTaTiVZr)50N50 nitride film as diffusion barrier in copper metallization

Results on copper metallization diffusion barriers using high-entropy alloy (HEA) nitride are reported. The HEA nitride (AlMoNbSiTaTiVZr)50N50 is amorphous in the as-deposited state and remains its noncrystallinity up to a high temperature of 850°C. To evaluate its diffusion barrier characteristics,...

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Bibliographic Details
Published in:Applied physics letters 2008-02, Vol.92 (5)
Main Authors: Tsai, Ming-Hung, Wang, Chun-Wen, Lai, Chia-Han, Yeh, Jien-Wei, Gan, Jon-Yiew
Format: Article
Language:eng ; jpn
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Summary:Results on copper metallization diffusion barriers using high-entropy alloy (HEA) nitride are reported. The HEA nitride (AlMoNbSiTaTiVZr)50N50 is amorphous in the as-deposited state and remains its noncrystallinity up to a high temperature of 850°C. To evaluate its diffusion barrier characteristics, Cu∕(AlMoNbSiTaTiVZr)50N50∕Si test structures were prepared and annealed under 750–900°C for 30min. The results show that the current nitride prevents the reaction between Cu and Si before its failure at 900°C. The outstanding barrier performance and high thermal stability of amorphous structure are suggested to originate from multiprincipal-element effects.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.2841810