Improvement in C-V characteristics of Ge metal-oxide semiconductor capacitor by H2O2 incorporated HCl pretreatment

Electrical characteristics of high-κ∕Ge metal-oxide semiconductor (MOS) capacitors pretreated with HCl or HF solutions are investigated, including the effect of H2O2 incorporation. HCl treatment is more effective than HF treatment for decreasing equivalent oxide thickness. H2O2 incorporation into HC...

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Bibliographic Details
Published in:Applied physics letters 2008-02, Vol.92 (6)
Main Authors: Kamata, Yoshiki, Ino, Tsunehiro, Koyama, Masato, Nishiyama, Akira
Format: Article
Language:English
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Summary:Electrical characteristics of high-κ∕Ge metal-oxide semiconductor (MOS) capacitors pretreated with HCl or HF solutions are investigated, including the effect of H2O2 incorporation. HCl treatment is more effective than HF treatment for decreasing equivalent oxide thickness. H2O2 incorporation into HCl solution leads to dramatic decrease in the capacitance at inversion side. We have confirmed that residual metal impurities are reduced below 1010atoms∕cm2 on the Ge surface after pretreatment with mixed solution of HCl and H2O2. We conclude that decrease in metal impurities at Ge surface is responsible for the superior C-V characteristic of Ge MOS capacitor.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.2857477