Direct structural evidences of Mn11Ge8 and Mn5Ge2 clusters in Ge0.96Mn0.04 thin films

Mn-rich clusters in Mn-doped Ge thin films epitaxially grown on Ge (001) have been investigated by various transmission electron microscopy techniques. Both the mysterious Mn11Ge8 and the hexagonal Mn5Ge2 (a=0.72nm and c=1.3nm) clusters were confirmed to coexist in the thicker Ge0.96Mn0.04 film (80n...

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Published in:Applied physics letters 2008-03, Vol.92 (10)
Main Authors: Wang, Yong, Zou, Jin, Zhao, Zuoming, Han, Xinhai, Zhou, Xiaoyu, Wang, Kang L.
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Han, Xinhai
Zhou, Xiaoyu
Wang, Kang L.
description Mn-rich clusters in Mn-doped Ge thin films epitaxially grown on Ge (001) have been investigated by various transmission electron microscopy techniques. Both the mysterious Mn11Ge8 and the hexagonal Mn5Ge2 (a=0.72nm and c=1.3nm) clusters were confirmed to coexist in the thicker Ge0.96Mn0.04 film (80nm). Their possible formation mechanism is attributed to the existence of ordered stacking faults. The fact that no Mn-rich clusters found in thinner films (
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title Direct structural evidences of Mn11Ge8 and Mn5Ge2 clusters in Ge0.96Mn0.04 thin films
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