Low temperature thermal, thermoelectric, and thermomagnetic transport in indium rich Pb1−xSnxTe alloys

Galvanomagnetic and thermomagnetic data of single crystal indium rich Pb1−xSnxTe are analyzed, and electronic band parameters are calculated using nonparabolic band model. Transport properties at 80K are presented as a function of Sn (x=0–0.3) and In concentrations. Our results indicate pinning of F...

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Bibliographic Details
Published in:Journal of applied physics 2008-03, Vol.103 (5)
Main Authors: Jovovic, V., Thiagarajan, S. J., Heremans, J. P., Komissarova, T., Khokhlov, D., Nicorici, A.
Format: Article
Language:eng ; jpn
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Summary:Galvanomagnetic and thermomagnetic data of single crystal indium rich Pb1−xSnxTe are analyzed, and electronic band parameters are calculated using nonparabolic band model. Transport properties at 80K are presented as a function of Sn (x=0–0.3) and In concentrations. Our results indicate pinning of Fermi level by indium impurity levels in these alloys. Effects of interaction of band with impurity level are investigated in terms of change in effective mass and energy scattering exponent. Indium doping slightly improves the thermoelectric properties of PbSnTe alloys.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.2890150