M -plane GaN grown on m -sapphire by metalorganic vapor phase epitaxy

GaN layers have been grown on m -plane sapphire by metal organic vapor phase epitaxy using low-temperature AlN nucleation layers. Depending on substrate nitridation and annealing treatments prior to depositing the nucleation layer, the crystal orientation of the resulting GaN layer may be either ( 1...

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Bibliographic Details
Published in:Applied physics letters 2008-03, Vol.92 (9), p.092121-092121-3
Main Authors: Armitage, R., Hirayama, H.
Format: Article
Language:English
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Summary:GaN layers have been grown on m -plane sapphire by metal organic vapor phase epitaxy using low-temperature AlN nucleation layers. Depending on substrate nitridation and annealing treatments prior to depositing the nucleation layer, the crystal orientation of the resulting GaN layer may be either ( 11 − 22 ) or ( 1 − 100 ) ( m plane). For suitably controlled conditions, GaN epilayers with a single m -plane orientation are reproducibly obtained as confirmed by x-ray diffraction. There is a 90° in-plane rotation of the epilayer such that the GaN a axis is parallel to the sapphire c axis.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.2894509