Loading…
M -plane GaN grown on m -sapphire by metalorganic vapor phase epitaxy
GaN layers have been grown on m -plane sapphire by metal organic vapor phase epitaxy using low-temperature AlN nucleation layers. Depending on substrate nitridation and annealing treatments prior to depositing the nucleation layer, the crystal orientation of the resulting GaN layer may be either ( 1...
Saved in:
| Published in: | Applied physics letters 2008-03, Vol.92 (9), p.092121-092121-3 |
|---|---|
| Main Authors: | , |
| Format: | Article |
| Language: | English |
| Citations: | Items that this one cites Items that cite this one |
| Online Access: | Get full text |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| cited_by | cdi_FETCH-LOGICAL-c346t-4ef1f82255b8739ca9f4c5483896ca71d6187b8dc5eab2609a5966f9ed1049183 |
|---|---|
| cites | cdi_FETCH-LOGICAL-c346t-4ef1f82255b8739ca9f4c5483896ca71d6187b8dc5eab2609a5966f9ed1049183 |
| container_end_page | 092121-3 |
| container_issue | 9 |
| container_start_page | 092121 |
| container_title | Applied physics letters |
| container_volume | 92 |
| creator | Armitage, R. Hirayama, H. |
| description | GaN layers have been grown on
m
-plane sapphire by metal organic vapor phase epitaxy using low-temperature AlN nucleation layers. Depending on substrate nitridation and annealing treatments prior to depositing the nucleation layer, the crystal orientation of the resulting GaN layer may be either
(
11
−
22
)
or
(
1
−
100
)
(
m
plane). For suitably controlled conditions, GaN epilayers with a single
m
-plane orientation are reproducibly obtained as confirmed by x-ray diffraction. There is a 90° in-plane rotation of the epilayer such that the GaN
a
axis is parallel to the sapphire
c
axis. |
| doi_str_mv | 10.1063/1.2894509 |
| format | article |
| fullrecord | <record><control><sourceid>scitation_cross</sourceid><recordid>TN_cdi_crossref_primary_10_1063_1_2894509</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>apl</sourcerecordid><originalsourceid>FETCH-LOGICAL-c346t-4ef1f82255b8739ca9f4c5483896ca71d6187b8dc5eab2609a5966f9ed1049183</originalsourceid><addsrcrecordid>eNp1kLFOwzAURS0EEqEw8AdeGVz84tix2VBVClILC8zWi-u0QU1i2RHQv2-gXZmurnT09O4h5Bb4FLgS9zDNtSkkN2ckA16WTADoc5JxzgVTRsIluUrpc6wyFyIj8xVlYYedpwt8pZvYf3e072hLWcIQtk30tNrT1g-46-MGu8bRLwx9pGGLyVMfmgF_9tfkosZd8jennJCPp_n77Jkt3xYvs8clc6JQAyt8DbXOcykrXQrj0NSFk4UW2iiHJawV6LLSayc9VrniBqVRqjZ-DbwwoMWE3B3vutinFH1tQ2xajHsL3P7ut2BP-0f24cgmN_44NH33P2xX9k-CHSXYUYI4AB-AXxE</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>M -plane GaN grown on m -sapphire by metalorganic vapor phase epitaxy</title><source>American Institute of Physics:Jisc Collections:Transitional Journals Agreement 2021-23 (Reading list)</source><source>AIP Journals (American Institute of Physics)</source><creator>Armitage, R. ; Hirayama, H.</creator><creatorcontrib>Armitage, R. ; Hirayama, H.</creatorcontrib><description>GaN layers have been grown on
m
-plane sapphire by metal organic vapor phase epitaxy using low-temperature AlN nucleation layers. Depending on substrate nitridation and annealing treatments prior to depositing the nucleation layer, the crystal orientation of the resulting GaN layer may be either
(
11
−
22
)
or
(
1
−
100
)
(
m
plane). For suitably controlled conditions, GaN epilayers with a single
m
-plane orientation are reproducibly obtained as confirmed by x-ray diffraction. There is a 90° in-plane rotation of the epilayer such that the GaN
a
axis is parallel to the sapphire
c
axis.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/1.2894509</identifier><identifier>CODEN: APPLAB</identifier><language>eng</language><publisher>American Institute of Physics</publisher><ispartof>Applied physics letters, 2008-03, Vol.92 (9), p.092121-092121-3</ispartof><rights>2008 American Institute of Physics</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c346t-4ef1f82255b8739ca9f4c5483896ca71d6187b8dc5eab2609a5966f9ed1049183</citedby><cites>FETCH-LOGICAL-c346t-4ef1f82255b8739ca9f4c5483896ca71d6187b8dc5eab2609a5966f9ed1049183</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://pubs.aip.org/apl/article-lookup/doi/10.1063/1.2894509$$EHTML$$P50$$Gscitation$$H</linktohtml><link.rule.ids>314,780,782,784,795,27924,27925,76383</link.rule.ids></links><search><creatorcontrib>Armitage, R.</creatorcontrib><creatorcontrib>Hirayama, H.</creatorcontrib><title>M -plane GaN grown on m -sapphire by metalorganic vapor phase epitaxy</title><title>Applied physics letters</title><description>GaN layers have been grown on
m
-plane sapphire by metal organic vapor phase epitaxy using low-temperature AlN nucleation layers. Depending on substrate nitridation and annealing treatments prior to depositing the nucleation layer, the crystal orientation of the resulting GaN layer may be either
(
11
−
22
)
or
(
1
−
100
)
(
m
plane). For suitably controlled conditions, GaN epilayers with a single
m
-plane orientation are reproducibly obtained as confirmed by x-ray diffraction. There is a 90° in-plane rotation of the epilayer such that the GaN
a
axis is parallel to the sapphire
c
axis.</description><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2008</creationdate><recordtype>article</recordtype><recordid>eNp1kLFOwzAURS0EEqEw8AdeGVz84tix2VBVClILC8zWi-u0QU1i2RHQv2-gXZmurnT09O4h5Bb4FLgS9zDNtSkkN2ckA16WTADoc5JxzgVTRsIluUrpc6wyFyIj8xVlYYedpwt8pZvYf3e072hLWcIQtk30tNrT1g-46-MGu8bRLwx9pGGLyVMfmgF_9tfkosZd8jennJCPp_n77Jkt3xYvs8clc6JQAyt8DbXOcykrXQrj0NSFk4UW2iiHJawV6LLSayc9VrniBqVRqjZ-DbwwoMWE3B3vutinFH1tQ2xajHsL3P7ut2BP-0f24cgmN_44NH33P2xX9k-CHSXYUYI4AB-AXxE</recordid><startdate>20080303</startdate><enddate>20080303</enddate><creator>Armitage, R.</creator><creator>Hirayama, H.</creator><general>American Institute of Physics</general><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>20080303</creationdate><title>M -plane GaN grown on m -sapphire by metalorganic vapor phase epitaxy</title><author>Armitage, R. ; Hirayama, H.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c346t-4ef1f82255b8739ca9f4c5483896ca71d6187b8dc5eab2609a5966f9ed1049183</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2008</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Armitage, R.</creatorcontrib><creatorcontrib>Hirayama, H.</creatorcontrib><collection>CrossRef</collection><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Armitage, R.</au><au>Hirayama, H.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>M -plane GaN grown on m -sapphire by metalorganic vapor phase epitaxy</atitle><jtitle>Applied physics letters</jtitle><date>2008-03-03</date><risdate>2008</risdate><volume>92</volume><issue>9</issue><spage>092121</spage><epage>092121-3</epage><pages>092121-092121-3</pages><issn>0003-6951</issn><eissn>1077-3118</eissn><coden>APPLAB</coden><abstract>GaN layers have been grown on
m
-plane sapphire by metal organic vapor phase epitaxy using low-temperature AlN nucleation layers. Depending on substrate nitridation and annealing treatments prior to depositing the nucleation layer, the crystal orientation of the resulting GaN layer may be either
(
11
−
22
)
or
(
1
−
100
)
(
m
plane). For suitably controlled conditions, GaN epilayers with a single
m
-plane orientation are reproducibly obtained as confirmed by x-ray diffraction. There is a 90° in-plane rotation of the epilayer such that the GaN
a
axis is parallel to the sapphire
c
axis.</abstract><pub>American Institute of Physics</pub><doi>10.1063/1.2894509</doi></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0003-6951 |
| ispartof | Applied physics letters, 2008-03, Vol.92 (9), p.092121-092121-3 |
| issn | 0003-6951 1077-3118 |
| language | eng |
| recordid | cdi_crossref_primary_10_1063_1_2894509 |
| source | American Institute of Physics:Jisc Collections:Transitional Journals Agreement 2021-23 (Reading list); AIP Journals (American Institute of Physics) |
| title | M -plane GaN grown on m -sapphire by metalorganic vapor phase epitaxy |
| url | http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-24T00%3A22%3A26IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-scitation_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=M%20-plane%20GaN%20grown%20on%20m%20-sapphire%20by%20metalorganic%20vapor%20phase%20epitaxy&rft.jtitle=Applied%20physics%20letters&rft.au=Armitage,%20R.&rft.date=2008-03-03&rft.volume=92&rft.issue=9&rft.spage=092121&rft.epage=092121-3&rft.pages=092121-092121-3&rft.issn=0003-6951&rft.eissn=1077-3118&rft.coden=APPLAB&rft_id=info:doi/10.1063/1.2894509&rft_dat=%3Cscitation_cross%3Eapl%3C/scitation_cross%3E%3Cgrp_id%3Ecdi_FETCH-LOGICAL-c346t-4ef1f82255b8739ca9f4c5483896ca71d6187b8dc5eab2609a5966f9ed1049183%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |