Impact of the strained SiGe source/drain on hot carrier reliability for 45nm p-type metal-oxide-semiconductor field-effect transistors

In this letter, the impact of the uniaxial strain SiGe source/drain (S/D) on hot carrier reliability in 45nm p-type metal-oxide-semiconductor field-effect transistor is investigated in detail. We find that the extra mechanical stress deteriorates the gate oxide and/or generates interface states sign...

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Bibliographic Details
Published in:Applied physics letters 2008-03, Vol.92 (13)
Main Authors: Cheng, C. Y., Fang, Y. K., Hsieh, J. C., Hsia, H., Chen, W. M., Lin, S. S., Hou, C. S.
Format: Article
Language:eng ; jpn
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Summary:In this letter, the impact of the uniaxial strain SiGe source/drain (S/D) on hot carrier reliability in 45nm p-type metal-oxide-semiconductor field-effect transistor is investigated in detail. We find that the extra mechanical stress deteriorates the gate oxide and/or generates interface states significantly, resulting in the hot carrier degradation dominantly driven by the drain avalanche hot carrier stress (Vg=1∕2Vd), as opposed to the channel hot electron stress (Vg=Vd), the well-known dominant mechanism for hot carrier degradation in the conventional deep submicron devices. A model to explain the mechanism of these observations is proposed.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.2904647