Saturation of intersubband transitions in p-doped GaAs∕AlGaAs quantum wells

Optical saturation experiments have been performed on hh1-hh2 intersubband transitions in two samples of p-doped GaAs∕AlGaAs quantum wells. The transitions had energies of 183 and 160meV and the measured population relaxation times were 2±1.5 and 0.3±0.1ps, respectively. Modeling of the quantum well...

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Bibliographic Details
Published in:Applied physics letters 2008-05, Vol.92 (18)
Main Authors: Steed, Robert, Matthews, Mary, Plumridge, Jonathan, Frogley, Mark, Phillips, Chris, Ikonic, Zoran, Harrison, Paul, Malis, Oana, Pfeiffer, Loren N., West, Kenneth W.
Format: Article
Language:English
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Summary:Optical saturation experiments have been performed on hh1-hh2 intersubband transitions in two samples of p-doped GaAs∕AlGaAs quantum wells. The transitions had energies of 183 and 160meV and the measured population relaxation times were 2±1.5 and 0.3±0.1ps, respectively. Modeling of the quantum wells with a 6×6 k⋅p method shows that intersubband scattering by LO phonons can account for these relaxation times. The valence bandstructure is typically more complicated than the conduction bandstructure in a quantum well but these measurements show that LO phonons are the dominant intersubband scattering mechanism in both cases.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.2920706