Effects of heat dissipation on unipolar resistance switching in Pt∕NiO∕Pt capacitors

We fabricated Pt∕NiO∕Pt capacitor structures with various bottom electrode thicknesses tBE and investigated their resistance switching behaviors. The capacitors with tBE⩾50nm exhibited typical unipolar resistance memory switching, while those with tBE⩽30nm showed threshold switching. This interestin...

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Bibliographic Details
Published in:Applied physics letters 2008-05, Vol.92 (18)
Main Authors: Chang, S. H., Chae, S. C., Lee, S. B., Liu, C., Noh, T. W., Lee, J. S., Kahng, B., Jang, J. H., Kim, M. Y., Kim, D.-W., Jung, C. U.
Format: Article
Language:English
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Summary:We fabricated Pt∕NiO∕Pt capacitor structures with various bottom electrode thicknesses tBE and investigated their resistance switching behaviors. The capacitors with tBE⩾50nm exhibited typical unipolar resistance memory switching, while those with tBE⩽30nm showed threshold switching. This interesting phenomenon can be explained in terms of the temperature-dependent stability of conducting filaments. In particular, the thinner tBE makes dissipation of Joule heat less efficient, so the filaments will be at a higher temperature and become less stable. This study demonstrates the importance of heat dissipation in resistance random access memory.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.2924304